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WO/2024/155654A1 |
Methods of manufacturing an extreme ultraviolet (EUV) pellicles are disclosed. The methods comprise forming on a carbon nanotube (CNT) membrane of an EUV pellicle a nucleation layer. A protective material layer is deposited on the nuclea...
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WO/2024/154535A1 |
The purpose of the present invention is to provide an reflective mask blank that produces little processing error when subjected to charged particle radiation processing, and that demonstrates excellent inspection performance. A reflec...
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WO/2024/149536A1 |
Disclosed herein is a light source arranged to illuminate a non-patterning surface of a patterning device in a lithographic apparatus, wherein the light source is configured such that, in response to illumination from the light source, t...
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WO/2024/147624A1 |
A method for manufacturing a porous EUV pellicle is provided. The method for manufacturing a porous EUV pellicle may comprise the steps of: preparing a substrate structure in which first and second mask layers are formed, respectively, o...
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WO/2024/143467A1 |
Provided is a pellicle film that is likely to have uniform in-plane thickness and, as a result, is likely to have uniform transmittance with respect to EUV light. A pellicle film 12 is used in EUV lithography. The pellicle film 12 has ...
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WO/2024/138289A1 |
A color filter substrate and a preparation method therefor, a mask and a preparation method therefor, and a color filter motherboard, which belong to the technical field of display. A mask (MK) is used for preparing a support pillar laye...
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WO/2024/135419A1 |
An electron beam mask inspection apparatus according to one aspect of the present invention is characterized by comprising: a stage on which a mask substrate is placed; a substrate cover electrode that is arranged on the mask substrate s...
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WO/2024/132443A1 |
The invention relates to a method and a device for mask inspection, wherein the mask is designed for operation in reflection at an operating wavelength of less than 30 nm and is intended to be illuminated in a lithography process in a pr...
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WO/2024/132408A1 |
A system includes a first container and a second container. The first container receives a patterning device and maintains a predetermined environment inside the first container. The second container receives the first container and main...
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WO/2024/130057A1 |
A broadband light source includes a confocal sensor assembly configured to measure a surface of a rotatable drum coated with plasma-forming target material. The broadband light source includes a laser source configured to direct pulsed i...
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WO/2024/125883A1 |
There is provided a pellicle membrane comprising thermally emissive crystals supported by a matrix, wherein the average thickness of the pellicle membrane is greater than the average grain size of the emissive crystals. Also provided is ...
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WO/2024/129698A1 |
An automatic photomask handling assembly is employed for holding a photomask for cleaning processes in an atmospheric pressure plasma (APP) chamber. The automatic photomask handling assembly includes a set of stationary standoffs with ea...
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WO/2024/120705A1 |
There is provided a reticle or a reticle blank comprising a low deformation material, wherein the reticle or reticle blank material has a Zero Crossing Temperature (ZCT) profile, and a ZCT slope profile, wherein at least one of the ZCT p...
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WO/2023/094362A9 |
The present invention relates to a method and an apparatus for calibrating an operation on a mask. A method for producing correction marks on an object for lithography, in particular for calibrating an operation, using a particle beam in...
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WO/2024/119545A1 |
A mask having a function of improving a proximity effect in electron beam lithography and a preparation method therefor. The mask comprises: a substrate (1); and a mask absorption layer (2) made of a low-atomic-number material, to reduce...
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WO/2024/115173A1 |
For the three-dimensional determination of an aerial image of a measurement object with the aid of a metrology system, a 3D aerial image of the measurement object is measured as a measurement intensity result in an image field in a plura...
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WO/2024/118350A1 |
Systems and methods for detecting defects on a reticle are provided. One system is configured for generating different stacked difference images for multiple instances of first patterned areas in different rows on a wafer based on images...
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WO/2024/116835A1 |
This mask blank layered body for EUV lithography comprises a mask blank substrate for EUV lithography, an organic underlayer film disposed on one surface of the substrate, and a resist film disposed on the organic underlayer film.
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WO/2024/066218A9 |
A mask and a layout method therefor, and a typesetting pattern (500) of a chip. The mask comprises: a chip pattern region, which comprises a plurality of chip pattern groups (501) distributed at intervals in a first direction (a), wherei...
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WO/2024/110141A1 |
Disclosed are methods, systems, and computer software for generating a mask design. A method can include obtaining an initial OPC pattern contour resulting from an OPC process and determining a set of selected points on the initial OPC p...
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WO/2024/112062A1 |
This extreme ultraviolet lithography blankmask comprises a phase shift film, the phase shift film comprising at least one of Ru, Mo, Nb, Si, and Zr. The phase shift film has a low refractive index (n) and low extinction coefficient (k), ...
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WO/2024/102313A1 |
A reticle container includes an outer pod and an inner pod, the inner pod configured to contain a reticle. The outer pod includes a pod door including a purge port, and a pod dome including one or more channels configured to receive a pu...
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WO/2024/100090A1 |
A method for determining pattern density data for a pattern to be printed using a mask printing device is disclosed. Vector data describing the pattern to be printed are received and the vector data are rasterized to produce rasterized d...
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WO/2024/094385A1 |
Systems, methods, and computer software are disclosed for reducing wafer patterning errors caused by a mask device. One method (300) can include obtaining a first mask design (310) having a first portion (324) associated with an optimize...
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WO/2024/087254A1 |
A method and apparatus for quickly removing particles by using an organic thin film. The method comprises: S1, coating an organic solution on the surface of a material substrate containing particles to be removed, wherein the organic sol...
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WO/2024/090109A1 |
The present invention comprises: a light irradiation unit 2 that irradiates a light-transmissive and film-like test object W with inspection light L1; a scattered light detection unit 3 for detecting scattered light L2 which is produced ...
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WO/2024/085026A1 |
Provided is a reflective mask blank which can reduce the diffusion of boron (B), contained in an absorber film, into an etching mask film. This reflective mask blank contains a substrate, a multilayer reflective film, an absorber film ...
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WO/2024/084796A1 |
Provided are a light source device and a raw material supply unit which can inhibit the impact of debris. This light source device uses energy beam (EB) irradiation to convert a liquid raw material (23) into plasma and extract radiatio...
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WO/2024/086543A1 |
A method of evaluating the microstructure of a surface, such as a coating on a substrate. The surface is illuminated using at least one light source. One or more images of the illuminated surface are captured. The captured images are pro...
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WO/2024/085089A1 |
Provided is a reflection-type mask blank having excellent strength of a surface on the reverse surface side on which a conductive film is disposed. This reflection-type mask blank comprises: a substrate; a conductive film disposed on o...
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WO/2024/080446A1 |
The disclosed pellicle manufacturing method of the present invention comprises: a silicon nitride layer formation step of forming a silicon nitride layer on each of the two sides of a wafer substrate; a nickel layer formation step of for...
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WO/2024/076221A1 |
The present invention pertains to a manufacturing method of a graphene membrane pellicle for an extreme ultra violet (EUV) lithographic apparatus. The present invention provides a manufacturing method of a graphene membrane pellicle for ...
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WO/2024/065153A1 |
Provided in the embodiments of the present disclosure are a mask, an array substrate and a manufacturing method therefor, and a display device. The array substrate comprises a base, and a via provided on one side of the base, wherein the...
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WO/2024/073091A1 |
An apparatus includes an inner container having a baseplate and a cover, an outer container having a pod dome and a pod door, and a first set of pins and a second set of pins disposed on the pod door. The pod door has a locked state and ...
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WO/2024/071026A1 |
Provided is a substrate with a conductive film which can inhibit changes in flatness in a reflective mask and a reflective mask blank for EUV lithography having a conductive film. This substrate with a conductive film includes a substr...
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WO/2024/061952A1 |
In a method for operating a projection exposure system (10) for microlithography, a mask (40) is repeatedly exposed with an exposure radiation (14) provided by an illumination system (20), and mask structures (42) are imaged on, in each ...
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WO/2024/064194A1 |
A spacer for parts of a reticle pod includes spacer contacts configured to contact alignment features of a cover and a baseplate of the reticle pod such that the cover and baseplate are separated by a gap. The spacer includes a frame con...
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WO/2024/056548A1 |
A pellicle for use in a lithographic apparatus, the pellicle include: a membrane, the membrane having a first portion and a second portion; and a protective portion at the second portion on at least one side of the membrane. A method for...
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WO/2024/058243A1 |
The present invention provides a manufacturing method for a conductive film having high accuracy in detecting a defect. The manufacturing method includes an examination step for irradiating a conductive film with a laser beam to examine ...
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WO/2024/057500A1 |
Provided is an EUV-transmissive film in which EUV absorption by a protective layer causing a decrease in EUV transmittance can be suppressed, thereby enabling exhibition of high EUV transmittance at the time of exposure. The EUV-transmis...
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WO/2024/057499A1 |
Provided is an EUV transmissive film from which particles are unlikely to be generated even when the film is damaged by any chance. This EUV transmissive film is provided with: a main layer that is formed of metallic beryllium and that h...
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WO/2024/053634A1 |
This reflective mask blank comprises a substrate, a multilayer reflective film that reflects EUV light, a protective film that protects the multilayer reflective film, and a phase shift film that shifts the phase of the EUV light in this...
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WO/2024/048387A1 |
The purpose of the present invention is to provide a reflection-type mask blank that prevents electrostatic damage from occurring, while suppressing CD changes during a dry etching process. A reflection-type mask blank 100 comprises a ...
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WO/2024/045984A1 |
A color filter substrate (10), a display panel (100), and a mask (200). The color filter substrate comprises a display area located in the middle and a non-display area located on the periphery of the display area, and comprises a substr...
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WO/2024/046107A1 |
The present invention relates to Zn-based organically-coordinated nanoparticles, a photoresist composition, a preparation method therefor, and the use thereof. The nanoparticles have a metal-organic one-dimensional repeatedly-arranged ch...
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WO/2024/045204A1 |
A method and apparatus for locating a production monitoring point of a photomask, and an electronic device. The method for locating a production monitoring point of a photomask comprises: determining coordinates of one or more target det...
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WO/2024/048365A1 |
A foreign matter removal device according to the present disclosure comprises: a vacuum ultraviolet light generation unit that generates vacuum ultraviolet light; an irradiation container for irradiating a pellicle film with the vacuum u...
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WO/2024/044091A1 |
A glass comprising titania and silica is disclosed. A plot of average hydroxyl concentration of each segment of a plurality of segments vs. distance along the glass is provided by: y = Ax2 + Bx + C, wherein A (in ppm/mm2) is in a range f...
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WO/2024/037837A1 |
Described a method and system for generating a mask pattern design for use in imaging of a pattern on a substrate using a lithographic apparatus. The methods include identifying an area located between two adjacent exposure fields in a l...
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WO/2024/039587A1 |
Reticle containers include a cover and a baseplate having contact surfaces configured to contact one another when the reticle container is assembled. Relief areas are provided adjacent to at least one of the contact surfaces. The relief ...
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