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WO/2023/038139A1 |
This pellicle is provided with a pellicle frame, a pellicle film which is supported on one end surface of the pellicle frame, and an adhesive layer which is provided on the other end surface of the pellicle frame, and satisfies formula (...
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WO/2023/038142A1 |
This pellicle is provided with a pellicle frame, a pellicle film, and an adhesive layer. An inner wall surface and/or an outer wall surface of the adhesive layer satisfies expression (1). Expression (1): ([A2s]/[A50s]) ≤ 0.97 where A...
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WO/2023/039054A1 |
Reticle pods include interfacing surfaces to secure segments of the reticle pod to one another. At least one of the interfacing surfaces is a ramped surface, such that when the reticle pods are secured to one another, the reticle is clam...
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WO/2023/038840A1 |
Extreme ultraviolet (EUV) mask blanks, methods of forming EUV mask blanks and production systems therefor are disclosed. The EUV mask blanks comprise a multilayer reflective stack on a substrate. The multilayer reflective stack comprises...
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WO/2023/038141A1 |
This pellicle frame has one end surface provided with an adhesive layer capable of adhering to a photomask, and another end surface for supporting a pellicle film. The pellicle frame is a rectangular pellicle frame (but is not a pellicle...
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WO/2023/036561A1 |
Since a mask check wafer can utilize a different process than a production wafer, a high-contrast illumination setting with lower pupil fill ratio (PFR) that leads to a reduction of the productivity of the scanner can be utilized. By sel...
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WO/2023/037731A1 |
Provided are a mask blank, a phase shift mask, and a method for producing a semiconductor device, the mask blank being provided with a light-blocking film that has a desired light-blocking property and makes it possible to suppress an in...
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WO/2023/036895A1 |
The present invention relates to a method (1800) for repairing at least one defect (320) of a sample (205, 300, 1500) using a focused particle beam (227), comprising the steps of: (a) producing (1850) at least one first local, electrical...
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WO/2023/037980A1 |
Provided is a multilayer reflective film-attached substrate having a multilayer reflective film which has a shallow effective reflection surface and in which the phenomenon of material atom diffusion between a low-refractive-index layer ...
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WO/2023/036200A1 |
The present application provides a thin film mask, comprising: a first layer and a second layer. The first layer and the second layer are laminated; the second layer comprises an adhesive film; the absorption coefficient of the first lay...
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WO/2023/038140A1 |
The objective is to provide a pellicle which less likely generates outgas. A pellicle (10) of the present disclosure comprises a pellicle frame (14), a pellicle film (12) supported on one end face of the pellicle frame (14), and an adh...
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WO/2023/033975A1 |
Extreme ultraviolet (EUV) mask blanks, production systems therefor, and methods of increasing multilayer film reflectance are disclosed. The EUV mask blanks comprise a bilayer film on a substrate. The bilayer film comprises a first film ...
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WO/2023/025511A1 |
A pellicle membrane for a lithographic apparatus, wherein the pellicle membrane comprises metal silicide and a reinforcing network. The reinforcing network can be located between metal silicide layers. The reinforcing network can be irre...
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WO/2023/026868A1 |
This reflective mask blank has a substrate, a multilayer reflection film that reflects EUV light, and a phase shift film that shifts the phase of the EUV light in this order. The phase shift film contains a compound containing Ru and an ...
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WO/2023/027051A1 |
[Problem] To achieve high performance of a filter attached to a ventilation port provided through a pellicle frame so as to satisfy strict use conditions required particularly for EUV exposure. [Solution] A pellicle according to the pres...
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WO/2023/027159A1 |
This pellicle film contains a plurality of carbon nanotubes, wherein the plurality of carbon nanotubes have an average value of the linearity parameter represented by formula (1) of is 0.10 or lower. Formula (1): the linearity paramete...
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WO/2023/021856A1 |
This substrate processing device is provided with a substrate holding unit for holding a substrate, and a plasma reactor (1). The plasma reactor (1) emits plasma onto a main surface of the substrate. The plasma reactor (1) comprises: at ...
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WO/2023/016752A1 |
Described are embodiments for generating a design (e.g., a metrology mark or a device pattern to be printed on a substrate) that is optimized for aberration sensitivity related to an optical system of a lithography system. A metrology ma...
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WO/2023/016270A1 |
A reticle preparation method, a reticle, a Josephson junction element, and a quantum chip, relating to the field of quantum information, and in particular to the technical field of quantum computing. The reticle preparation method compri...
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WO/2023/016723A1 |
An improved methods and systems for detecting defect(s) on a mask are disclosed. An improved method comprises inspecting an exposed wafer after the wafer was exposed, by a lithography system using a mask, with a selected process conditio...
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WO/2023/015638A1 |
A photomask and a method for preparing same, which are used for avoiding the situation whereby a photomask is discarded and unusable due to a destructive process failure thereof, thereby saving on costs. The photomask comprises: a first ...
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WO/2023/012338A1 |
Disclosed is a patterning device, a metrology target and a metrology method which have a top grating, formed in a resist layer, comprised of resist layer surface variations and topology, without having resist gratings trenches formed, af...
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WO/2023/011849A1 |
An apparatus for cleaning a component for use in a lithographic apparatus, the apparatus comprising at least one cleaning module or a plurality of cleaning modules, wherein the at least one cleaning module or the plurality of cleaning mo...
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WO/2023/013660A1 |
[Problem] To achieve high performance with respect to a filter applied to a ventilation hole provided penetrating a pellicle frame, in order to respond, in particular, to a reduction in the maximum allowable foreign matter size required ...
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WO/2023/007321A1 |
Methods for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography include inputting a desired pattern to be formed on a substrate; determining an initial mask pattern from the desired pattern for the su...
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WO/2023/006346A1 |
Described herein is a method for generating a mask pattern for a lithographic process. The involves generating a smoothed representation of a segmented mask pattern by applying a first smoothing function and adjusting the segmented mask ...
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WO/2023/008877A1 |
According to an embodiment of the present invention, high light transmittance and heat dissipation can be achieved while preventing damage to an EUV reflector due to particles that are foreign materials. To this end, in particular, an em...
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WO/2023/008876A1 |
According to an embodiment of the present invention, a pellicle has the effect of increasing light transmittance and facilitating natural radiation of thermal energy, through a through-hole of the pellicle. To this end, in particular, an...
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WO/2023/005845A1 |
A hard mask and a preparation method therefor. The hard mask comprises a substrate (10) and a pattern setting layer (20), a first insulating layer (11) is formed on the surface of the substrate (10), a first pattern line hole (12) passin...
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WO/2023/008532A1 |
The present invention provides: a pellicle film including a film (BNNT film) having boron nitride nanotubes; and a pellicle for photolithography including a pellicle film and a pellicle frame, wherein the pellicle film is provided on one...
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WO/2023/004493A1 |
A photolithography mask (10) is provided, said photolithography mask (10) including a plate (15) or an empty frame matrix, a surface of the plate (15) or empty frame matrix including an array of micro-pixels (20), wherein each micro-pixe...
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WO/2023/006227A1 |
The present invention refers to a method for determining at least one optical property of at least one deposition material used for a for lithographic mask which comprises the steps: (a) determining a height value of the at least one dep...
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WO/2023/009684A1 |
An amorphous layer is used as a protective coating for hygroscopic nonlinear optical crystals. The amorphous layer consists of one or more alkali metal borates and/or alkali earth metal borates. The amorphous layer slows or prevents wate...
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WO/2023/008435A1 |
This reflective mask blank has a substrate, a multilayer reflection film that reflects EUV light, and a phase shift film that shifts the phase of the EUV light in this order. The phase shift film is a film on which an aperture pattern is...
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WO/2023/283930A1 |
The present application relates to the field of photomask sheet design, and discloses a photomask and a photomask fixing apparatus. The photomask comprises: a photomask body; the photomask body comprises a first side surface and a second...
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WO/2023/285071A1 |
Apparatuses, systems, and methods for selecting a subset of critical patterns from a plurality of patterns of a design layout. In some embodiments, the method comprising accessing diffraction order data based on the plurality of patterns...
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WO/2023/287171A1 |
The present invention relates to a film mask and a manufacturing method therefor. The objective of the present invention is to provide: a film mask used during photosensitive resin exposure in order to form a metal pattern on a transpare...
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WO/2023/286669A1 |
The present invention pertains to a reflection type mask blank having: a substrate; a Mo/Si multilayer reflection layer on the substrate; an intermediate layer on the Mo/Si multilayer reflection layer; a barrier layer on the intermediate...
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WO/2023/280511A1 |
Described are embodiments for identification of error clusters in an image predicted by a simulation model (e.g., a machine learning model), and further training or adjusting the simulation model by feeding the error cluster information ...
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WO/2023/276398A1 |
Provided is a mask blank comprising a phase shift mask membrane that satisfies required light resistance to exposure light of an ArF excimer laser, and that enables practically accurate and easy correction of EB defect. This mask blank...
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WO/2022/267835A1 |
An OPC detection method, a computer device, and a computer-readable storage medium. Once rounding processing is performed on a second target pattern, the obtained rounded pattern is closer to the pattern of an actual silicon wafer, which...
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WO/2022/268924A1 |
The present invention encompasses a method for use with a lithographic mask, comprising the following steps: (a.) directing a particle beam onto an element of the lithographic mask in an atmosphere of gas particles, (b.) inducing a desor...
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WO/2022/270661A1 |
The present invention relates to a dissolution precipitation device for ions and salt components present on the surface of a substrate and a dissolution method using same. Particularly, the dissolution precipitation device for ions and s...
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WO/2022/267053A1 |
A metal mesh, comprising: a plurality of first metal wires (11) and second metal wires (12) arranged intersecting in extension directions, wherein the first metal wires (11) are arranged side by side along a first direction and extend al...
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WO/2022/266320A1 |
An apparatus includes a reticle pod. The reticle pod includes a baseplate having a first surface, a cover having a second surface, and at least one layer. The first surface includes a first mating surface. The second surface includes a s...
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WO/2022/266057A1 |
Extreme ultraviolet (EUV) mask blanks, production systems therefor, and methods of reducing roughness are disclosed. The EUV mask blanks comprise a multilayer reflective stack on a substrate comprising a plurality of pairs of alternating...
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WO/2022/264832A1 |
The purpose of the present disclosure is to provide a reflective photomask capable of reducing a projection effect, and a method for manufacturing a reflective photomask. A reflective photomask (100) according to one aspect of the presen...
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WO/2022/263378A1 |
Described are a method for processing a surface of an object, in particular of a lithographic mask, an apparatus for carrying out such a method and a computer program containing instructions for carrying out such a method. A method for p...
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WO/2022/265621A1 |
A digital lithography system includes scan regions including a first scan region and a second scan region adjacent to the first scan region. The digital lithography system further includes exposure units located above the scan regions, a...
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WO/2022/263312A1 |
Described herein is a method of determining assist features for a mask pattern. The method includes obtaining (i) a target pattern comprising a plurality of target features, wherein each of the plurality of target features comprises a pl...
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