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Matches 1 - 50 out of 29,238

Document Document Title
WO/2024/080446A1
The disclosed pellicle manufacturing method of the present invention comprises: a silicon nitride layer formation step of forming a silicon nitride layer on each of the two sides of a wafer substrate; a nickel layer formation step of for...  
WO/2024/076221A1
The present invention pertains to a manufacturing method of a graphene membrane pellicle for an extreme ultra violet (EUV) lithographic apparatus. The present invention provides a manufacturing method of a graphene membrane pellicle for ...  
WO/2024/066218A1
A mask and a layout method therefor, and a typesetting pattern (500) of a chip. The mask comprises: a chip pattern region, which comprises a plurality of chip pattern groups (501) distributed at intervals in a first direction (a), wherei...  
WO/2024/065153A1
Provided in the embodiments of the present disclosure are a mask, an array substrate and a manufacturing method therefor, and a display device. The array substrate comprises a base, and a via provided on one side of the base, wherein the...  
WO/2024/073091A1
An apparatus includes an inner container having a baseplate and a cover, an outer container having a pod dome and a pod door, and a first set of pins and a second set of pins disposed on the pod door. The pod door has a locked state and ...  
WO/2024/071026A1
Provided is a substrate with a conductive film which can inhibit changes in flatness in a reflective mask and a reflective mask blank for EUV lithography having a conductive film. This substrate with a conductive film includes a substr...  
WO/2024/061952A1
In a method for operating a projection exposure system (10) for microlithography, a mask (40) is repeatedly exposed with an exposure radiation (14) provided by an illumination system (20), and mask structures (42) are imaged on, in each ...  
WO/2024/064194A1
A spacer for parts of a reticle pod includes spacer contacts configured to contact alignment features of a cover and a baseplate of the reticle pod such that the cover and baseplate are separated by a gap. The spacer includes a frame con...  
WO/2024/056548A1
A pellicle for use in a lithographic apparatus, the pellicle include: a membrane, the membrane having a first portion and a second portion; and a protective portion at the second portion on at least one side of the membrane. A method for...  
WO/2024/058243A1
The present invention provides a manufacturing method for a conductive film having high accuracy in detecting a defect. The manufacturing method includes an examination step for irradiating a conductive film with a laser beam to examine ...  
WO/2024/057500A1
Provided is an EUV-transmissive film in which EUV absorption by a protective layer causing a decrease in EUV transmittance can be suppressed, thereby enabling exhibition of high EUV transmittance at the time of exposure. The EUV-transmis...  
WO/2024/057499A1
Provided is an EUV transmissive film from which particles are unlikely to be generated even when the film is damaged by any chance. This EUV transmissive film is provided with: a main layer that is formed of metallic beryllium and that h...  
WO/2024/053634A1
This reflective mask blank comprises a substrate, a multilayer reflective film that reflects EUV light, a protective film that protects the multilayer reflective film, and a phase shift film that shifts the phase of the EUV light in this...  
WO/2024/048387A1
The purpose of the present invention is to provide a reflection-type mask blank that prevents electrostatic damage from occurring, while suppressing CD changes during a dry etching process. A reflection-type mask blank 100 comprises a ...  
WO/2024/045984A1
A color filter substrate (10), a display panel (100), and a mask (200). The color filter substrate comprises a display area located in the middle and a non-display area located on the periphery of the display area, and comprises a substr...  
WO/2024/046107A1
The present invention relates to Zn-based organically-coordinated nanoparticles, a photoresist composition, a preparation method therefor, and the use thereof. The nanoparticles have a metal-organic one-dimensional repeatedly-arranged ch...  
WO/2024/045204A1
A method and apparatus for locating a production monitoring point of a photomask, and an electronic device. The method for locating a production monitoring point of a photomask comprises: determining coordinates of one or more target det...  
WO/2024/048365A1
A foreign matter removal device according to the present disclosure comprises: a vacuum ultraviolet light generation unit that generates vacuum ultraviolet light; an irradiation container for irradiating a pellicle film with the vacuum u...  
WO/2024/044091A1
A glass comprising titania and silica is disclosed. A plot of average hydroxyl concentration of each segment of a plurality of segments vs. distance along the glass is provided by: y = Ax2 + Bx + C, wherein A (in ppm/mm2) is in a range f...  
WO/2024/037837A1
Described a method and system for generating a mask pattern design for use in imaging of a pattern on a substrate using a lithographic apparatus. The methods include identifying an area located between two adjacent exposure fields in a l...  
WO/2024/039587A1
Reticle containers include a cover and a baseplate having contact surfaces configured to contact one another when the reticle container is assembled. Relief areas are provided adjacent to at least one of the contact surfaces. The relief ...  
WO/2024/039574A1
A system for mask design repair may develop a simulation-based model of a layer thickness after one or more process steps for fabricating features on a sample, develop a transformed model of the fabrication process that emulates the simu...  
WO/2024/034439A1
Provided is a reflective mask blank for EUV lithography in which a multilayer reflective film that reflects EUV light and an absorption film that absorbs EUV light are laminated on a substrate in the stated order from the substrate side,...  
WO/2024/028468A2
Method of characterizing a fault in a scanning electron microscope (100), wherein the scanning electron microscope (100) is suitable for analysing and/or processing a sample (10), especially a lithography mask, with the aid of an electro...  
WO/2024/029410A1
Provided are a reflective mask for EUV lithography that can form transfer patterns with high dimensional accuracy in fine hole-like patterns, and a reflective mask blank used for said reflective mask. A reflective mask blank 10 for EUV l...  
WO/2024/029409A1
Provided are: a reflective mask for EUV lithography that can form a transfer pattern having high dimensional accuracy with respect to a fine line-shaped pattern; and a reflective mask blank used for the reflective mask. A reflective mask...  
WO/2024/027999A1
A reflective member for use in an EUV lithographic apparatus, the reflective member comprising a multilayer stack which comprises a plurality of layers arranged in pairs, wherein: each pair comprises a first layer and a second layer; the...  
WO/2024/023165A1
A method for checking a lithography mask (100) for a repair of the lithography mask (100), the lithography mask (100) having a plurality of edges (110) between partial regions of the lithography mask (100) and the object of the repair ly...  
WO/2024/022854A1
Described herein are methods and systems for training a prediction model to predict a mask image in which mask rule check (MRC) violations or process violations (e.g., edge placement error, sub-resolution assist feature (SRAF) printing) ...  
WO/2024/022729A1
A system for removing particles from a surface includes a plurality of ultrasonic transducers, arranged in an array, a control system, in communication with the plurality of ultrasonic transducers, the control system configured to contro...  
WO/2024/024513A1
Provided is a reflection-type mask blank comprising a substrate, a multi-layer reflective film that reflects EUV light, a protective film that protects the multi-layer reflective film, and an absorption film that absorbs the EUV light, i...  
WO/2024/017808A1
A method of determining a mask design is described. The method comprises generating a continuous multimodal representation of a probability distribution of a target design in at least a portion of a latent space. The latent space compris...  
WO/2024/012128A1
A mask assembly (10), a photolithographic device, and a photolithographic method. By means of a double exposure process, a process window is improved. The mask assembly (10) comprises a first mask (11) and a second mask (12). The first m...  
WO/2024/014207A1
The present invention addresses the problem of providing a reflection-type mask blank for which machining error is small when machining by charged particle radiation is carried out. A reflection-type mask blank (10a) includes, in the g...  
WO/2024/013273A1
Described herein are methods and systems for determining mask rule check (MRC) violations associated with mask features based on local feature dimension (LFD) of mask features. A detector is placed at a first location of a mask feature a...  
WO/2024/009809A1
This reflective mask blank has, in the following order, a substrate, a multilayer reflective film that reflects EUV light, a protective film that protects the multilayer reflective film, and a phase shift film that shifts the phase of th...  
WO/2024/010238A1
A photomask according to an embodiment comprises: a substrate; and a plurality of patterns disposed on the substrate, wherein the patterns comprise a first layer and a second layer having different electrical conductivities, and have an ...  
WO/2024/009819A1
This reflective mask blank comprises, in the stated order, a substrate, a multi-layered reflective film that reflects EUV light, a protective film that protects the multi-layered reflective film, and a phase shift film that shifts the ph...  
WO/2024/009976A1
The present invention relates to a pellicle frame constituting a pellicle for photolithography, wherein the pellicle frame is made of pure titanium or a titanium alloy and the surface thereof is subjected to a mechanical polishing proces...  
WO/2024/010631A1
This disclosure relates to compositions for cleaning post etching residues on a semiconductor substrate, as well as related cleaning methods.  
WO/2024/006037A1
A system and method for cleaning an optical element of an EUV optical system is disclosed. The system and method may include receiving design data of one or more samples. The system and method may include simulating a plurality of irradi...  
WO/2024/004843A1
Provided is a method for manufacturing a thin film-equipped substrate, the method making it possible to detect an identification mark when performing a defect inspection on the thin film-equipped substrate, and easily performing an indiv...  
WO/2024/005038A1
[Problem] The present invention addresses the problem of improving the adhesion between a first layer and a second layer in a substrate with a multilayer reflective film, the substrate having a protective film that comprises the first la...  
WO/2024/006117A1
Spacers include a base configured to be placed within depressions of one of a cover or a baseplate of a reticle pod, and a contact surface configured to contact the other of the cover and the baseplate. The spacers are configured to spac...  
WO/2023/247443A1
The disclosure relates to a stencil mask, a method for manufacturing the stencil mask and use of the stencil mask in nanoscale device nanofabrication, including imprinting on substrates of deposition patterns for nanoscale devices. One e...  
WO/2023/249314A1
The present invention relates to a method for manufacturing a pellicle for extreme ultraviolet lithography. The present invention relates to a method for manufacturing a pellicle for extreme ultraviolet lithography. More specifically, th...  
WO/2023/245047A1
The present disclosure relates to precursor compositions for forming irradiation sensitive films. In particular, the disclosure is directed to use of metal-containing precursors having haloaliphatic or unsaturated substituents, or other ...  
WO/2023/240672A1
The embodiments of the present disclosure provide a region analysis method and device for a scribe line pattern. The method comprises: determining the size of a scribe line pattern on a mask plate; according to a first image layer in a l...  
WO/2023/237404A1
An illumination optical unit (1) is part of a mask inspection system for use with EUV illumination light (3). A hollow waveguide (11) serves to guide the illumination light (3). For the illumination light (3), the hollow waveguide (11) h...  
WO/2023/236254A1
A photomask pattern correction method, a system, a photomask and a preparation method therefor. The photomask pattern correction method comprises: acquiring photomask data of all photomask patterns in a photomask pattern template, the ph...  

Matches 1 - 50 out of 29,238