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Patent Searching and Data


Matches 351 - 400 out of 857,375

Document Document Title
WO/2019/018462A2
Methods, systems, and devices for offset cancellation for latching in memory devices are described. A memory device may include a sense component comprising a first and second transistor. In some cases, a memory device may further includ...  
WO/2019/015336A1
A shift register unit (100), a scan drive circuit (10), an array substrate (1), a display device and a drive method. The shift register unit (100) comprises an input circuit (11), a reset circuit (12), an output circuit (13) and a pull-d...  
WO/2019/016539A1
A switching resistor comprises a dielectric layer disposed between a first electrode layer and a second electrode layer, the switching resistor having a high resistance state and a low resistance state. The switching resistor is responsi...  
WO/2019/015355A1
A scanning shift circuit and a driving method therefor, a touch control shift circuit and a driving method therefor, a gate drive circuit, a touch control drive circuit and a display device. The scanning shift circuit comprises: an input...  
WO/2019/015309A1
A shift register unit (100), a method for driving the shift register unit (100), a gate drive circuit, an array substrate and a display device. The shift register unit (100) comprises: an input sub-circuit (101), a first end of the input...  
WO/2019/018530A1
Apparatuses and methods for providing additional drive to multilevel signals representing data are described. An example apparatus includes a first driver section, a second driver section, and a third driver section. The first driver sec...  
WO/2019/010956A1
A shift register unit and a driving method therefor, a gate driving circuit, and a display apparatus. The shift register unit comprises: an input circuit (10), an output circuit (20), a pull-down control circuit (30) and a pull-down circ...  
WO/2019/012207A1
The invention concerns an RFID radio tag (1) for a vinyl disc comprising at least one electronic chip (2) and an antenna (5), configured as a spiral and wherein the central part (9) of the radio tag is provided with a through-hole. The r...  
WO/2019/013925A1
A power multiplexor includes: a first branch including a first transistor coupled in series with a second transistor between a first power supply and a power output; a second branch including a third transistor coupled in series with a f...  
WO/2019/012737A1
[Problem] To provide various means for efficiently attenuating vibrations applied to a turntable to dramatically reduce the noise picked up by a needle, thereby allowing a listener to hear original sounds buried in noise that prevents th...  
WO/2019/013775A1
A computing device that includes a plurality of memory devices and firmware to provide a migration data storage option that reserves a portion of a memory device to store, at least, encrypted metadata describing the physical layout infor...  
WO/2019/011996A1
A method for saving digital data on a photographic medium (1) in particular a strip, preferably a strip of 35 mm film, comprising the step involving imaging, on the medium (1), blocks (14) of pixels encoding the information to be saved a...  
WO/2019/010952A1
A shift-register circuit, a driving method thereof, a gate-driving circuit and a display apparatus are disclosed. The shift-register circuit includes an input sub-circuit (10), a reset sub-circuit (20), an output sub-circuit (30), a pull...  
WO/2019/011749A1
An input current (Iin) is transformed into an output integrated voltage (Vout_int) using a parallel connection of an operational transconductance amplifier and an integration capacitor. The output integrated voltage is reduced by repeate...  
WO/2019/014131A1
A magnetoresistive device comprises a fixed magnetic region positioned on or over a first electrically conductive region, an intermediate layer positioned on or over the fixed magnetic region, a free magnetic region positioned on or over...  
WO/2019/013955A1
Multiple (multi-) level cell (MLC) non-volatile (NV) memory (NVM) matrix circuits for performing matrix computations with multi-bit input vectors are disclosed. An MLC NVM matrix circuit includes a plurality of NVM storage string circuit...  
WO/2019/013953A1
Non-volatile (NV) memory (NVM) matrix circuits employing NVM circuits for performing matrix computations are disclosed. In exemplary aspects disclosed herein, an NVM matrix circuit is provided that has a plurality of NVM storage string c...  
WO/2019/013851A1
A semiconductor device includes a clock divider (72) that receives a clock signal (58) and generates even and odd clock signals (74, 76). The clock signal (58) includes a first frequency, while the even and odd clock signals (74, 76) eac...  
WO/2019/010044A1
One embodiment facilitates mitigating write amplification in a phase change memory-based storage device. During operation, the system receives, by a controller of the storage device, data to be stored in a phase change memory (PCM) of th...  
WO/2019/007043A1
A gate drive unit circuit and a driving method therefor, a gate drive circuit and a display apparatus. The gate drive unit circuit comprises: a shift register (SR) and several drive signal output sub-circuits (5), wherein each of the dri...  
WO/2019/010251A1
Methods and systems are provided for enhanced audio experiences in VR/AR applications. The apparatuses of this disclosure are adapted to record multiple binaural stereo pairs and play back select binaural pairs corresponding to user's he...  
WO/2019/007049A1
A shift register (SRi), a gate driving circuit (140) and a driving method therefor, and a liquid crystal display (10). The shift register (SRi) comprises: a pull-up sub-circuit (201), configured to set the potential of a pull-up node (PU...  
WO/2019/008186A1
A method is shown for providing a user interface for a 3D environment of 360° images. The method includes displaying a first 360 degree image in a sequence of 360 degree images; receiving user input to interact with one of a plurality o...  
WO/2019/008483A1
Provided is a semiconductor device having a large memory capacity per unit surface area. The invention relates to a memory cell having a first transistor, a second transistor, a third transistor, a fourth transistor, a first capacitive e...  
WO/2019/009086A1
This semiconductor laser device (1) is provided with: a lower electrode block (10) which has a first terminal hole and has a first and second connection hole on both sides of a recess that houses a submount where a semiconductor laser el...  
WO/2019/009082A1
The present technique relates to a signal processing device, a signal processing method, and a program that allow one DSD signal to also support a PCM signal output. A distribution device comprises: an extraction unit for extracting, whe...  
WO/2019/009876A1
A phase change memory structure (100) includes a phase change material layer (110), a top electrode layer (120) above the phase change material layer, a metal silicon nitride layer (130) in contact with the top electrode layer opposite f...  
WO/2019/009039A1
The present invention provides a list creation program for creating a content reproduction list corresponding to the traveling situation of a vehicle. Content information of contents stored in a plurality of portable wireless terminals, ...  
WO/2019/009942A1
In calibrating the phase skew between an SDRAM data strobe ("DQS") signal and data ("DQ") signal in a device, the data signal driver circuit impedance is adjusted to impair impedance matching on the DQ signal channel while system-level m...  
WO/2019/005113A1
Techniques are disclosed for forming resistive random-access memory (RRAM) including a tunnel source access transistor, such as a tunnel source MOSFET. The use of a tunnel source access transistor includes integrating a tunnel diode on t...  
WO/2019/005173A1
An apparatus is provided which comprises: a first magnet; a stack of layers, a portion of which is adjacent to the first magnet, wherein the stack of layers is to provide an inverse spin-orbit coupling effect; a second magnet; one or mor...  
WO/2019/004274A1
An aspect of the present invention is represented by the general formula (1A): (R-π-E-CH2)2-A for an organofluorine compound (wherein A is a divalent perfluoropolyether group; π is an arylene group or a single bond; R is an alkenyl gro...  
WO/2019/005923A1
Magnetic switching devices, including magnetic memory devices, are provided. The devices use high-quality crystalline films of 4d or 5d transition metal perovskite having a strong spinorbit coupling (SOC) to produce spin-orbit torque in ...  
WO/2019/005647A1
Disclosed herein are magnetic storage media with embedded disconnected circuits, magnetic storage systems comprising such media, and methods of using such media. A magnetic storage media comprises a recording layer comprising a storage l...  
WO/2019/002241A1
This disclosure falls into the field of adapting external content to a video stream, and more specifically it is related to analyzing the video stream to define a suitable narrative model, and adapting the external content based on this ...  
WO/2019/005147A1
An apparatus is provided which comprises: a magnetic junction having a free magnet layer which has perpendicular magnetic anisotropy (PMA), wherein the free magnet layer has anisotropy axis perpendicular to a plane of a device; and an in...  
WO/2019/000895A1
Provided are a method and system for managing an anomaly log of a Flash player, the method comprising: in a logic execution process of a Flash player, configuring anomaly nodes at corresponding key logic locations; and when the anomaly n...  
WO/2019/005046A1
An apparatus is provided which comprises: a magnetic junction having a free magnet layer; and an interconnect adjacent to the free magnet layer, wherein the interconnect includes a material to provide a positive spin Hall angle. In some ...  
WO/2019/005229A1
Systems and methods are described for compacting operating parameter sets in a data storage device. Data storage device may be configured to maintain multiple operating parameter sets, each of which stores various parameters for interact...  
WO/2019/000456A1
The present application provides a data mask (DM) transmission method, a memory controller, a memory chip, and a computer system. The method comprises: a memory controller transmits a first write command to a memory chip, wherein the fir...  
WO/2019/003578A1
A magnetic recording medium according to the present invention includes: an elongated substrate; and a magnetic layer containing magnetic powder and a binder, wherein the glass transition point of the binder is not lower than 75°C. When...  
WO/2019/003040A1
A system for creating a pulsating image, comprising an electronic device comprising a camera and configured to communicate with a storage; a designated application running on the electronic device; the designated application comprises: a...  
WO/2019/005230A1
Systems and methods are described for generating location-based read voltage offsets in a data storage device. Optimal read voltage thresholds vary across memory elements of a device. However, data storage devices are often limited in th...  
WO/2019/003014A1
Provided is a semiconductor device in which an increase in circuit surface area is curbed. This semiconductor device comprises a control circuit having a plurality of scan chain circuits; a DA converter which is electrically connected to...  
WO/2019/005158A1
A spin orbit torque (SOT) memory device includes a spin orbit torque electrode disposed in a dielectric layer above a substrate and a magnetic tunnel junction (MTJ) device disposed on a portion of the spin orbit torque electrode. The spi...  
WO/2019/000363A1
System and method can support data processing on a movable platform. The system comprises a memory buffer with a plurality of buffer blocks. A first data processor can perform a write operation to write data into the memory buffer, and p...  
WO/2019/003045A1
Provided is a storage device with a fast operating speed. This storage device is provided with a first and a second memory cell, a first and a second bit line, a first and a second switch, and a sense amplifier. The sense amplifier is pr...  
WO/2019/003047A1
Provided is a semiconductor device enabling high integration. Specifically provided is a semiconductor device which has a transistor, an interlayer film, and a first conductor, and in which: the transistor is provided with an oxide upon ...  
WO/2019/006066A1
Voltage-switched magneto-resistive random access memory (MRAM) employing separate read operation circuit paths from a shared spin torque write operation circuit path is disclosed. The MRAM includes an MRAM array that includes MRAM bit ce...  
WO/2019/004484A1
This substrate for magnetic disks is provided with: a substrate main body having two main surfaces; and films of a material having a loss coefficient of 0.1 or more, said films being arranged on the main surfaces. The thickness T of this...  

Matches 351 - 400 out of 857,375