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WO/2024/045343A1 |
The present invention relates to a semiconductor device and a manufacturing method therefor. The semiconductor device comprises at least two through-silicon via (TSV) electrical connection structures which are vertically stacked and elec...
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WO/2024/047784A1 |
A first semiconductor layer (102) is formed on a substrate (101) by crystal growth of a first nitride semiconductor in the direction of the c-axis. A second semiconductor layer (103) made of a second nitride semiconductor having a band g...
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WO/2024/047713A1 |
The present invention forms a film on a substrate by performing a cycle which includes the following steps a prescribed number of times: (a) a step for forming a first layer on a substrate by supplying a first starting material and an ad...
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WO/2024/046345A1 |
Provided in the present invention are a chuck structure of a semiconductor cleaning device, and a semiconductor cleaning device. The chuck structure comprises a chuck base body configured to bear a wafer, and a plurality of avoidance rec...
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WO/2024/046713A1 |
A semiconductor structure is presented including a first source/drain (S/D) epi region having a first contact completely wrapping around the first S/D epi region, the first contact electrically connected to a backside power delivery netw...
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WO/2024/048804A1 |
A foreign matter removal device comprises a chamber including a fluid, and a magnet assembly below the chamber. The chamber comprises a loading portion for loading a first object, a second object, and a third object into the fluid, a fir...
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WO/2024/046577A1 |
The invention relates to a method and a device for influencing a bonding wave (6) during the bonding of a first substrate (4) to a second substrate (4'), - wherein at least the first substrate (4) is fixed to a first substrate holder (1)...
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WO/2024/048004A1 |
This laminated structure comprises: an amorphous substrate that has an insulating surface; an alignment layer that has a pattern on the amorphous substrate; and a semiconductor layer that includes gallium nitride, the semiconductor layer...
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WO/2024/046241A1 |
The present application provides an epitaxial structure and a preparation method therefor. The preparation method for an epitaxial structure comprises: forming a buffer layer, a mask layer, and an epitaxial layer located in first through...
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WO/2024/045637A1 |
A display panel and a preparation method therefor. The preparation method comprises: providing a first substrate (300), one side of the first substrate (300) being provided with a plurality of Micro-LED chips spaced apart; providing a se...
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WO/2024/045757A1 |
Provided in the present invention are a 2.5D packaging structure and a preparation method. Packages each comprising an adapter plate, a chip and a packaging layer, which are electrically connected, are first prepared, the independently a...
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WO/2024/047783A1 |
A high electron mobility transistor according to an embodiment of the present disclosure comprises a heterojunction structure that includes a GaN channel layer in which two recesses are formed with a predetermined gap therebetween. The h...
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WO/2024/047999A1 |
A film formation device according to the present invention is characterized by comprising: an electrostatic chuck 31 that absorbs the surface of a substrate S opposite the film formation-side surface thereof; a first support member 41 th...
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WO/2024/048856A1 |
The present invention relates to a collection device using a fluid vortex to increase collection efficiency and, more specifically, to a collection device that maximizes the collection efficiency for a specific material to be collected, ...
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WO/2024/049022A1 |
A dry etching method according to the present invention is a method for performing dry etching of an object by using a plurality of reactive gases including a first reactive gas having a first diffusion rate and a second reactive gas hav...
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WO/2024/045426A1 |
Provided in the embodiments of the present disclosure are a light-emitting panel, an electronic device and a manufacturing method for a light-emitting panel. The manufacturing method comprises: providing a magnetic substrate; electrifyin...
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WO/2024/048227A1 |
This semiconductor device provided with a plurality of pixels which each emit light comprises: a first semiconductor substrate including transistors for pixel circuits that control light emission from the respective pixels; an obverse su...
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WO/2024/045467A1 |
The present disclosure relates to the field of semiconductors, and provides a method for manufacturing a semiconductor structure and a semiconductor structure. The method for manufacturing a semiconductor structure comprises: forming a f...
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WO/2024/047858A1 |
An upper base material 20 of this wafer placement table 10 comprises a ceramic base material 21 that has an electrode 22 built therein, and has a wafer placement surface 21a on the upper surface of the ceramic base material 21. A lower b...
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WO/2024/048767A1 |
[Problem] To provide a crystal having excellent crystallinity and a laminate structure, and an element, an electronic device, an electronic apparatus, and a system using same. [Solution] Provided is a laminate structure in which an epita...
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WO/2024/048156A1 |
The present invention provides: a resin composition which is curable at a relatively low temperature and which has a long pot life; a cured product; and a semiconductor device and an electronic component which include the cured product.ã...
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WO/2024/046578A1 |
The invention relates to a vacuum substrate holder (1) for fixing a substrate (13), comprising a) a first vacuum zone (5, 5', 5", 5"') with at least one first fixing element (4, 4', 4", 4"'), b) a second vacuum zone (5, 5', 5", 5"') with...
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WO/2024/045389A1 |
A wafer etching method, comprising the following steps: S1, mounting a plasma flow control device between a wafer (302) and a gas inlet (202a) of a plasma reaction chamber (200) of a plasma etcher; S2, placing the wafer (302) on a wafer ...
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WO/2024/049890A1 |
A retaining ring for a carrier head of a chemical mechanical polishing system includes an annular outer portion having an annular outer surface and a plurality of flanges projecting radially inward from the annular outer portion. Adjacen...
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WO/2024/049701A1 |
Methods for DRAM device with a buried word line are described. The method includes forming a metal nitride layer comprising lanthanum nitride (LaN) and a molybdenum conductor layer in a feature on a substrate. The method includes deposit...
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WO/2024/048157A1 |
A silicon carbide substrate according to the present invention has a main surface. The main surface is composed of an outer peripheral part which is a portion within 5 mm from the outer peripheral edge of the main surface, and a central ...
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WO/2024/045861A1 |
Embodiments of the present application provide a chip and a manufacturing method therefor, and an electronic device. The problem that a gate control capability of a chip decreases along with miniaturization of a device size is solved. Th...
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WO/2024/045268A1 |
The present disclosure relates to the technical field of semiconductors. Provided are a manufacturing method for a semiconductor structure, and a semiconductor structure. The manufacturing method for a semiconductor structure comprises: ...
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WO/2024/050175A1 |
A cooler for power electronics comprises: first mounting surfaces for first power electronics modules, respectively; second mounting surfaces for second power electronics modules, respectively, each of the first mounting surfaces being p...
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WO/2024/045864A1 |
Provided in the present application are a semiconductor device, a preparation method and an electronic device. The method comprises: forming, on a substrate, a plurality of stacked structures, which are arranged spaced apart from each ot...
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WO/2024/047305A1 |
The invention relates to a method for polishing the front face of a polycrystalline silicon carbide slab comprising a surface region at least partially work-hardened under the effect of grinding, comprising: - relative movement of a rota...
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WO/2024/045266A1 |
The embodiments of the present disclosure relate to the field of semiconductors. Provided are a manufacturing method for a semiconductor structure, and a semiconductor structure. The manufacturing method for a semiconductor structure com...
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WO/2024/046240A1 |
An epitaxial structure and a preparation method therefor. The preparation method for the epitaxial structure comprises: providing a substrate (11); forming a buffer layer (12) located on one side of the substrate (11); and forming an epi...
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WO/2024/048187A1 |
This semiconductor device comprises a semiconductor element, a conductive member, a conductive joining layer, and a first positioning member. The semiconductor element has a first primary surface electrode. The conductive joining layer c...
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WO/2024/048393A1 |
This multilayer structure comprises an amorphous substrate that has an insulating surface, an alignment layer that is arranged on the amorphous substrate, and a semiconductor pattern that contains gallium nitride and is arranged on the a...
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WO/2024/048005A1 |
This layered structure comprises: an amorphous substrate that has an insulating surface; an orientation layer that has a pattern on the amorphous substrate having the insulating surface; a semiconductor layer that contains a gallium nitr...
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WO/2024/048382A1 |
The present invention addresses the problem of providing a method for processing an object to be processed, said method exhibiting an excellent etching amount with respect to a metal layer including at least one metal selected from the g...
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WO/2024/048487A1 |
A composition for forming a gap-filling material, the composition comprising: a compound and/or a polymer each having a structure represented by formula (1) and a carbonyl bond; and a solvent. (In formula (1), R1 and R2 each independentl...
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WO/2024/048651A1 |
A ceramic structure according to the present disclosure includes a substrate containing a plurality of ceramic particles. The substrate includes a base part having a recessed section. The recessed section includes inner-wall surfaces and...
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WO/2024/048106A1 |
This substrate processing apparatus performs electrolytic etching on the peripheral edge of a substrate (9). A first etching head (611) radially faces the peripheral edge of the substrate (9) in a part of the circumference around a rotat...
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WO/2024/048266A1 |
This semiconductor device comprises: a substrate; a channel layer that is provided on one surface side of the substrate, and that contains a first nitride semiconductor having a first band gap; a barrier layer that is provided on the sub...
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WO/2024/049625A1 |
A method for forming a semiconductor device is disclosed. The method includes forming a first layer on a substrate. The method includes forming a second layer on the first layer. The substrate and the second layer have a first semiconduc...
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WO/2024/049707A1 |
Methods for forming a semiconductor structure and semiconductor structures are described. Some embodiments of the method comprise patterning a substrate to form a first opening and a second opening, the substrate comprising an n transist...
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WO/2024/048241A1 |
The present invention provides a composition with outstanding Ru removal properties, the method for treating an object to be treated using the composition, and a method for manufacturing a semiconductor device. The composition according ...
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WO/2024/045384A1 |
A cutting method for an ultrathin sapphire wafer, comprising the steps that: a) bonding an ingot (1) in a square resin mold (2), and fixing the square resin mold (2) on a worktable by means of a resin strip (3); b) opening cutting fluid ...
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WO/2024/045870A1 |
The present application relates to the technical field of semiconductors, and provides a semiconductor component and a manufacturing method therefor, a chip, and an electronic device, capable of increasing the thermal stability of a fin ...
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WO/2024/045945A1 |
The present application relates to the technical field of manufacturing of solar cells, and in particular to a solar cell and a manufacturing method therefor. The manufacturing method for the solar cell comprises: texturing two surfaces ...
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WO/2024/048545A1 |
This film comprises a substrate, an antistatic layer that is provided on a surface of the substrate, and a release layer provided on the surface of the antistatic layer opposite the substrate. The elongation rate, measured by tensile tes...
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WO/2024/048800A1 |
The present invention comprises: a wafer transfer unit which loads and unloads a wafer to be inspected; a wafer inspection unit which receives a wafer transferred from the wafer transfer unit and acquires three-dimensional information on...
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WO/2024/047938A1 |
Provided is a two-fluid discharge device comprising a two-fluid nozzle, a gas supply unit, a liquid supply unit, and a control unit. In the present invention, the two-fluid nozzle can discharge a mixed liquid obtained by mixing a liquid ...
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