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Matches 701 - 750 out of 8,434

Document Document Title
WO2004017436A3
The invention relates to a non-volatile memory element and production methods thereof and storage element arrangement, whereby a first electrode (1) used to reduce a formation voltage comprises a field amplifier structure (4) used for am...  
WO/2004/034467A2
A memory array comprising nanoscale wires (61-72) is disclosed. The nanoscale wiresare addressed by means of controllable regions (80, 82) axially and/or radiallydistributed along the nanoscale wires. In a one-dimensional embodiment, mem...  
WO/2004/021256A1
The invention relates to a component that is made primarily of organic material and provides overvoltage protection for electronic circuits, and a circuit by means of which a multiple of the threshold voltage of an individual component c...  
WO/2004/019410A1
The invention relates to a ferroelectric device (10) with a body (11) comprising a substrate (1) and a ferroelectric layer (2) provided with a connection conductor (3) on a side facing away from the substrate (1), which ferroelectric lay...  
WO/2004/017436A2
The invention relates to a non-volatile memory element and production methods thereof and storage element arrangement, whereby a first electrode (1) used to reduce a formation voltage comprises a field amplifier structure (4) used for am...  
WO2003016205A3
The present invention relates to micro electro-mechanical systems (MEMS) and production methods thereof, and more particularly to vertically integrated MEMS systems. Manufacturing of MEMS and vertically integrated MEMS is facilitated by ...  
WO/2004/002508A1
A method for forming arrays of metal, alloy, semiconductor or magnetic nanoparticles is described. An embodiment of the method comprises placing a scaffold on a substrate, the scaffold comprising, for example, polynucleotides and/or poly...  
WO2003050891A3
A sealed photovoltaic module comprising a first substrate, a second substrate, at least one photovoltaic element positioned between the first and second substrates, and an edge seal between the first and second substrates positioned at o...  
WO2002089229A3
A molecular system (30) is provided for electric field activated switches, such as a crossed-wire device (10) or a pair of electrodes (12, 14) to which the molecular system (30) is linked by linking moieties. The cross-wire device (10) c...  
WO2002078102A3
A process of fabricating a molecular electronic device that preserves the integrity of the active molecular layer of the electronic device during processing is described. In one aspect, a barrier layer is provided to protect a molecular ...  
WO/2003/069677A1
A composite structure is formed so as to contain aluminum and silicon or silicon / germanium. The composite structure comprises pillar-shaped members containing aluminum and a region containing silicon or silicon / germanium and surround...  
WO2002080290A3
Molecular systems are provided for electric field activated switches, such as a crossed-wire device or a pair of electrodes to which the molecular system is linked by linking moieties. The crossed-wire device comprises a pair of crossed ...  
WO/2003/058728A1
An elecroluminescent device (1) comprises: a supporting substrate (2); at least two electrodes (3) positioned on the substrate (2); at least a three-dimensional percolated layer (4), positioned on the substrate (2) between the two electr...  
WO/2003/050891A2
A sealed photovoltaic module comprising a first substrate, a second substrate, at least one photovoltaic element positioned between the first and second substrates, and an edge seal between the first and second substrates positioned at o...  
WO/2003/031158A1
A non-conventional lithographic process for modifying, improving and fabricating structural anisotropy, organization and order, and anisotropy of the mechanical, electrical, optical, optoelectronics, charge-carrying and energy-carrying p...  
WO/2003/030266A1
The invention relates to a Coulomb blockade transistor comprising the following on a substrate: a stack of channel layers (22c, 22i) forming at least one quantum dot; a source (12) and a drain (80) which are connected to the quantum dot ...  
WO/2003/028116A1
A ultra high−speed photoelectric signal conversion element comprising a thin film (3) forming a light detection unit (5) provided on a substrate (4) and a pair electrodes (2) provided thereon across the light detection unit. The thin f...  
WO2002059984A3
A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extrememly simple and simple and inexpensive to im...  
WO/2003/016207A1
A fractal structure in which a fractal dimension featuring the self−similarity is formed of mutually different two regions and which has at least one heterojunction. Particularly, in a star−shaped fractal structure, a heterojunction ...  
WO/2003/016209A1
The invention relates to a method of forming a conducting nanowire between two contacts on a substrate surface wherein a plurality of nanoparticles is deposited on the substrate in the region between the contacts, and the single nanowire...  
WO/2003/016205A2
The present invention relates to micro electro-mechanical systems (MEMS) and production methods thereof, and more particularly to vertically integrated MEMS systems. Manufacturing of MEMS and vertically integrated MEMS is facilitated by ...  
WO/2003/011951A1
An organic polymer film which can be produced by a method comprising sublimating a cyclophane compound containing fluorine at 30 to 70&ring C, thermally decomposing the sublimated product at 680 to 770&ring C into a para−xylylene monom...  
WO/2003/011952A1
A low−permittivity and high−heat−resistance organic polymer film applicable to the insulation layer of a semiconductor device, a production method therefor, and a semiconductor device using it. A polyparaxylylene film including a p...  
WO/2003/007385A1
A single-electron transistor includes a projecting feature, such as a pyramid (150), that projects from a face of a substrate (100). A first electrode (110) is provided on the substrate face that extends onto the projecting feature. A se...  
WO/2003/003468A1
The invention discloses several variants of a quantum supertransistor. The inventive supertransistor comprises electrodes with a nanostructured material arranged therebetween, said material being consisted of clusters provided with tunne...  
WO/2003/003469A1
A method and apparatus that converts energy provided by a chemical reaction into energy for charging a quantum well device. The disclosed apparatus comprises a catalyst layer (120) that catalyzes a chemical reaction and captures hot elec...  
WO/2003/003467A1
The inventive quantum supermemory is based on cells of a nanostructured material. Said nanostructured material consists of clusters provided with tunnel-transparent shells. The cluster is dimensioned in such a way that it enables an elec...  
WO/2002/103436A2
A novel thin planar latching switch device, generally based on a layer of polymeric switching materials sandwiched between two electrical planar conductors operative as electrodes. The device behaves as a bi-stable switch. Furthermore, t...  
WO/2002/091494A1
A novel switching device is provided with an active region arranged between first and second electrodes and including a molecular system and ionic complexes distributed in the system. A control electrode is provided for controlling an el...  
WO/2002/091479A1
An apparatus and method for extracting energy is provided. In one aspect the method includes using chemical reactions to generate vibrationally excited molecules (101), such as high-quantum-number-vibrationally-excited gas molecules in a...  
WO/2002/089229A2
A molecular system (30) is provided for electric field activated switches, such as a crossed-wire device (10) or a pair of electrodes (12, 14) to which the molecular system (30) is linked by linking moieties. The cross-wire device (10) c...  
WO/2002/080290A2
Molecular systems are provided for electric field activated switches, such as a crossed-wire device or a pair of electrodes to which the molecular system is linked by linking moieties. The crossed-wire device comprises a pair of crossed ...  
WO/2002/078102A2
A process of fabricating a molecular electronic device that preserves the integrity of the active molecular layer of the electronic device during processing is described. In one aspect, a barrier layer is provided to protect a molecular ...  
WO/2002/059984A2
A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extrememly simple and simple and inexpensive to im...  
WO/2002/045182A1
A multiplex winding helical structure in which the element of helical structure, i.e. a linear structure, has a hierarchic structure comprising a finer helical structure, at least two hierarchic helical structures are jointed at at least...  
WO/2002/037500A1
A bistable electrical device (50) employing a bistable body (52) and a high conductivity material (54). A sufficient amount of high conductivity material (54) is included in the bistable body (52) to impart bistable between a low resista...  
WO/2002/031895A1
A mineral cell (1) comprises a housing (14) constituting the whole outer wall and having a housing section, a polar crystal powder (13) housing together with more than 5 mass% of water in terms of the absolute dry weight of the polar cry...  
WO/2002/021598A1
An electronic device comprising a first electrode made of a mixture conductor material having ion conductivity and electron conductivity and a second electrode made of a conductive material, in which a voltage is so applied between the f...  
WO/2002/019036A1
A silicon substrate is coated with one or more layers of resist. First and second circuit patterns are exposed in sequence, where the second pattern crosses the first pattern. The patterned resist layers are developed to open holes which...  
WO2000063981A9
A metal-insulator-metal diode device (10) and method of manufacture are described. The device includes conductive layers (12, 16) and a metal-insulator layer (14) comprising particles of a refractory metal (20) having an instrinsic oxide...  
WO2001003208A9
Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays us...  
WO2001039285A3
A metal plasma light emitter includes a metal-insulator-metal (MIM) structure (40) on a substrate (20). The MIM structure (40) includes a top metal layer (41) and a bottom metal layer (43) sandwiching an insulator layer (42) in between. ...  
WO/2001/099196A1
An electronic element which has an electronic function to operate even at the room temperature and which uses a perovskite crystal or the like in the ground state of the 'fractional quantum Hall effect' or the 'macroscopic quantum effect...  
WO/2001/091201A1
A fractal structure arranged to have a plurality of regions each having a different fractal dimension characterizing self similarity. In particular, a region of low fractal dimension is formed on the periphery of a nucleus having high fr...  
WO/2001/088996A1
The invention relates to a field effect transistor with a drain region, a source region, a channel region and a gate region. The gate region is provided with a metal layer.  
WO/2001/084238A1
A fast method of creating nanostructures comprising the steps of forming one or more electrically-charged regions (5) of predetermined shape on a surface (1) of a first material, by contacting the regions with a stamp for transferring el...  
WO2000042621A3
Epitaxial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD...  
WO/2001/047042A1
A method for stabilizing a tunnel junction component, in which a mask is formed on the surface of a substrate, and conductors (3, 4) are constructed by evaporation onto the substrate in an evaporation chamber, and at least one thin oxide...  
WO/2001/039285A2
A metal plasma light emitter includes a metal-insulator-metal (MIM) structure (40) on a substrate (20). The MIM structure (40) includes a top metal layer (41) and a bottom metal layer (43) sandwiching an insulator layer (42) in between. ...  
WO/2001/018866A1
The present invention provides a MOSFET device comprising: a substrate (1104) including a plurality of atomic ridges, each of the atomic ridges including a semiconductor layer comprising Si (1106) and a dielectric layer comprising a Si c...  

Matches 701 - 750 out of 8,434