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WO/2010/004675A1 |
Disclosed is a memory element (3) comprising: resistance change elements (1) which are arranged in matrix in a memory device, can change in the electric resistance value when an electric pulse having a positive or negative polarity is ap...
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WO/2009/157479A1 |
A switching element is provided with a variable resistance layer (13) containing an oxynitride, a first electrode (11) arranged in contact with the variable resistance layer (13), and a second electrode (12) which is arranged in contact ...
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WO/2009/153870A1 |
A phase-change memory element comprises a perovskite-type layer formed of a material having a perovskite-type structure and a phase-change recording material layer which is formed on the perovskite-type layer and which is energized via t...
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WO/2009/154266A1 |
Disclosed is a resistance change type nonvolatile memory that has an insulation film structure, is advantageous for the implementation of high integration, and achieves stable switching characteristics, and a manufacturing method therefo...
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WO/2009/150751A1 |
There is provided a switching element capable of high density integration and facilitating lamination. The switching element (100) includes: an insulating substrate (10), a first electrode (30) provided on the insulating substrate (10), ...
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WO/2009/150814A1 |
In a semiconductor device (100), an interlayer insulating layer (115) is formed on a topmost layer wiring (114), and contacts (116, 117) are formed through the interlayer insulating layer (115). A lower electrode (118a) of a variable re...
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WO/2009/147790A1 |
The non‑volatile storage element has a first electrode (103), a second electrode (105), and a variable resistance layer (104) that is provided between the first and second electrodes and can reversibly vary the inter‑electrode resist...
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WO/2009/142165A1 |
Disclosed is a semiconductor device including a field effect transistor comprising a diffusion layer and a resistance change element comprising a variable resistor layer. The semiconductor device comprises the variable resistor layer pro...
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WO/2009/141857A1 |
Provided is a resistance change nonvolatile memory device which enables the optimization of the size of a transistor of a memory cell. The resistance change nonvolatile memory device comprises a memory cell (300) constituted by connectin...
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WO/2009/139185A1 |
A non-volatile semiconductor memory device having a crosspoint configuration which combines non-ohmic elements and a variable resistance layer is comprised of an interlayer insulating layer (16) formed on a substrate (11) which includes ...
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WO/2009/136467A1 |
Provided is a nonvolatile storage element including: a first electrode (503), a second electrode (505), and a resistance-variable layer (504) arranged between the first electrode and the second electrode. The resistance value between the...
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WO/2009/125777A1 |
Disclosed is a resistance change element that is provided with a lower electrode formed upon a semiconductor or an insulator substrate, a resistance change material layer formed upon the lower electrode and composed mainly of transition ...
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WO/2009/122601A1 |
A nonvolatile memory device is characterized by comprising first electrode extending in a first direction, a first interelectrode insulating layer provided between the first electrodes, second electrodes extending in a second direction t...
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WO/2009/122567A1 |
This invention provides an information recording/reproducing device comprising a first layer, a second layer, and a recording layer which is held between the first layer and the second layer and, upon the supply of current through the fi...
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WO/2009/119533A1 |
Provided is a semiconductor storage device which can simultaneously realize the high reliability and the cell area reduction. A selection electrode (106) is formed to sandwich a p-type semiconductor region (102) and an insulating film (1...
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WO/2009/118926A1 |
A nonvolatile storage device is provided with a substrate; a first electrode which extends in a first direction on the substrate; a second electrode which extends in a second direction intersecting the first direction and is arranged on ...
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WO/2009/116564A1 |
Provided is a resistance change element capable of reducing the current required when switching from a low-resistance state to a high-resistance state. The resistance change element of the present example has three or more electrodes, an...
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WO/2009/114796A1 |
A non-volatile resistive switching memory that includes a material which changes between the insulative and conductive states due to correlations between electrons, particularly via a Mott transition. The material is crystallized into th...
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WO/2009/113699A1 |
This disclosure provides an information recording device for use in a non-volatile information recording/reproduction system having a high recording density, the device including a resistive material having less phase separation or the l...
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WO/2009/111832A1 |
The present disclosure provides a new type of gapless semiconductor material having electronic properties that can be characterized by an electronic band structure which comprises valence and conduction band portions VB1 and CB1, respect...
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WO/2008/059701A9 |
This invention provides a nonvolatile memory element comprising a first electrode (103), a second electrode (105), and a resistance change layer (104), provided between the first and second electrodes (103, 105), for undergoing a reversi...
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WO/2009/110120A1 |
A nonvolatile memory device is characterized in that it comprises a substrate, a first electrode provided on the substrate, a second electrode provided above the first electrode so as to cross the first electrode, and a memory section pr...
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WO/2009/107948A2 |
Provided are a MIT device self-heating preventive-circuit that can solve a self-heating problem of a MIT device (100) and a method of manufacturing a MIT device self-heating preventive-circuit integrated device. The MIT device self-heati...
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WO/2009/107993A2 |
Provided are a high current control circuit including a metal-insulator transition (MIT) device (100) and a system including the high current control circuit so that a high current can be controlled and switched by the small-size high cu...
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WO/2009/104789A1 |
Disclosed is a method for manufacturing a variable resistance element, wherein occurrence of corrosion can be reduced without raising the substrate temperature. Specifically, a multilayer film comprising a high-melting-point metal film a...
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WO/2009/104229A1 |
Disclosed is a resistive nonvolatile memory element that enables miniaturization and that is equipped with current paths that can be realized by a simple and easy process. The resistive nonvolatile memory element of this invention is cha...
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WO/2009/104239A1 |
A non-volatile storage device is provided with a first layer, a second layer and a recording layer which is sandwiched between the first layer and the second layer, and can reversibly be shifted between a first state where resistance is ...
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WO/2009/101785A1 |
A nonvolatile semiconductor storage device (100) is provided with a substrate (102) having a transistor (101) formed thereon; a first interlayer insulating layer (103) formed on the substrate to cover the transistor; a first contact plug...
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WO/2009/096363A1 |
A resistance nonvolatile memory element having a MIM multilayer structure of metal/resistivity-varying material (transition metal oxide)/metal. The element constitutes a resistance nonvolatile semiconductor memory device. The memory devi...
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WO/2009/084514A1 |
A storage element is provided with a first electrode (106), a second electrode (108), and a variable resistance material layer, which is arranged between the electrodes and varies the resistance value corresponding to a voltage applied b...
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WO/2009/082064A1 |
The present invention relates to a biomolecule-based electronic device in which the biomolecule with redox potential is directly immobilized on the substrate. The present invention enables to excellently exhibit the capability of a prote...
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WO/2009/081595A1 |
A first wiring layer (19) containing a first memory wiring line (12) is connected with a second wiring layer (20) containing a second memory wiring line (17), by a first contact (21) formed through a first interlayer insulating layer (13...
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WO/2009/078251A1 |
Disclosed is a switching device comprising a first electrode (101), a second electrode (102), and a complex oxide ion-conducting layer (103) arranged between the first electrode (101) and the second electrode (102). The complex oxide ion...
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WO/2009/078172A1 |
This invention provides a nonvolatile memory element that can be operated at a high speed and, at the same time, has reversibly stable rewrite characteristics and good resistance retention characteristics, a process for producing the non...
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WO/2009/075073A1 |
The nonvolatile memory device of this invention is characterized by comprising a substrate (1), first wiring (3), first fillings (5) that are formed embedded in first through-holes (4), second wiring (11) that is perpendicular to the fir...
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WO/2009/072213A1 |
This invention provides a resistance change-type memory device.The resistance change-type memory device comprises a lower electrode, a metal oxide film provided on the lower electrode and having a variable resistance value, an upper elec...
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WO/2009/072201A1 |
This invention provides a resistance change element comprising a transition metal nitride-containing first electrode, a second electrode containing a noble metal or a noble metal oxide, and a transition metal oxide film disposed between ...
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WO/2009/069690A1 |
Provided is a memory cell which can apply a voltage required for changing a resistance value into a high state and a low state to a variable resistance element by suitably controlling the resistance value. In the memory cell, a storage e...
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WO/2009/069364A1 |
Provided is a highly integrated switching resistive RAM having an extremely small occupation area of memory cells. Memory cells (11-14) are formed corresponding to the four intersections of word lines (WL0, WL1) and bit lines (BL0, BL1)....
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WO/2009/069252A1 |
Disclosed is a nonvolatile storage device comprising a substrate (1); a first wiring (3); a first variable resistance element (5) and a lower electrode (6) of a first diode element, which are embedded in a first through hole (4); a secon...
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WO/2009/066500A1 |
A plurality of three-terminal variable resistance switching elements each having a source electrode, a drain electrode, and a gate electrode are connected to each other in series. The source electrode of each of the three-terminal variab...
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WO/2009/063645A1 |
Provided are via hole (12), which is formed where first wire (11) crosses second wire (14), and current control element (13), wherein current control layer (13b) is interposed between first electrode layer (13a) and second electrode laye...
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WO/2009/057262A1 |
A nonvolatile semiconductor storage device is provided with a substrate (1); a first wiring (2); a memory cell composed of a resistance variable element (5) and a part of a diode element (6); a second wiring (11) which orthogonally inter...
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WO/2009/057211A1 |
A method for manufacturing a semiconductor device has a step for forming a first conductive film (28a), a first memory layer (36), and a second conductive film (38), a step for forming a first mask having a linear pattern extended in a f...
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WO/2009/050969A1 |
A nonvolatile semiconductor memory device comprises a memory cell array of electrically erasable programmable nonvolatile memory cells arranged in matrix, each memory cell using a variable resistor. A pulse generator is operative to gene...
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WO/2009/050833A1 |
A non-volatile memory element consists of a non-volatile element comprising a first electrode (503), a second electrode (505), and a resistance variable layer (504) which is interposed between the first electrode (503) and the second ele...
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WO/2009/050861A1 |
A nonvolatile memory element comprises a first electrode (103), a second electrode (105), and a resistance change layer (104) interposed between the first electrode (103) and the second electrode (105) and reversibly changing in resistan...
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WO/2009/051105A1 |
A switching element is provided with an ion conduction layer, and a first electrode (11) and a second electrode (12) arranged by being brought into contact with the ion conduction layer; and a third electrode (15) which is brought into c...
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WO/2009/039631A1 |
A microphone apparatus includes a carrier chip and a microphone chip. The carrier chip includes a substrate with parallel top and bottom surfaces, a metallization layer overlying the top surface, and a cylindrical cavity that is bored th...
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WO/2009/041041A1 |
This invention provides a nonvolatile memory element (101) comprising a variable resistance layer (112) provided between a first electrode (111) and a second electrode (113). The variable resistance layer (112) comprises an oxide of a gr...
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