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Document Title |
JP2005220274A |
To provide a polymer compound excellent in resolution in exposure to an ArF excimer laser and dry etching resist, capable of suppressing line edge roughness small and useful for a base resin for use in a radiation sensitive resist.The po...
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JP3682229B2 |
The maleimide-based copolymer, unsaturated dicarboxylic acid anhydride-based copolymer and thermoplastic resin composition containing these copolymers according to the present invention are superior in heat resistance and exhibits an exc...
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JP2005202205A |
To provide a positive resist composition which exhibits satisfactory transmittance at the time of using an exposure light source of ≤200 nm, specifically F2 excimer laser light (157 nm) and is improved in surface roughness, development...
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JP3676331B2 |
To obtain a resist pattern having a good pattern shape when a resist pattern is formed using exposing light having a wavelength of ≤180 nm band with minimally producing scum. A pattern formation material comprising a base resin contain...
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JP3675133B2 |
To obtain a resist compsn. which shows excellent adhesion strength to a film material and excellent durability against etching and for which a normal developer can be used for development, by incorporating a specified polymer and a PAG (...
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JP2005519167A |
Fluorinated copolymers useful in photoresist compositions and associated processes for microlithography are described. These copolymers are comprised of a fluoroalcohol or protected fluoroalcohol functional group which simultaneously imp...
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JP3656991B2 |
To provide a method for producing a cyclic olefinic copolymer in the presence of a catalyst simultaneously satisfying characteristics which comprise not producing a gel-like polymer component or a solvent-insoluble polymer component, hav...
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JP2005133049A |
To provide a resin for an offset printing ink, without using an alkylphenol and formaldehyde, capable of obtaining more than equivalent performance with that of the conventional rosin-modified phenolic resin.This resin for the offset ink...
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JP2005133052A |
To provide a resin for an offset ink, whereby an equal or higher level of properties are obtained in comparison with those obtained from a conventional rosin-modified resin, without using an alkylphenol and formaldehyde.The resin for an ...
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JP3646334B2 |
PURPOSE: To efficiently obtain a cyclic olefin polymer by using minute amounts of catalyst consisting mainly of a palladium compound component and a specific compound component. CONSTITUTION: This polymer is obtained by polymerizing a cy...
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JP3642048B2 |
To provide a composition which is excellent in adhesion to a substrate, heat resistance, solvent resistance, and capability for controlling an uneven shape and can easily form a film used as a light-diffusing reflective film of a reflect...
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JP3641748B2 |
To provide a photoresist monomer which can be used with a VUV (157 nm) light source, and a photoresist polymer. The photoresist monomer is represented by formula (1) (wherein X1, X2, R1, 1 and m are as defined in the specification). The ...
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JP2005084238A |
To provide a positive resist composition suitable for the use of an exposure light source at ≤160 nm, in particular, F2 excimer laser light (at 157 nm), and specifically, to provide a positive resist composition which suppresses develo...
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JP2005508512A |
A photoresist composition suitable for drawing by sub-200 nm wavelength irradiation, which comprises an ether bond containing a leaving group, is disclosed. Also disclosed is a method of providing a photoresist relief image using a photo...
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JP2005084239A |
To provide a positive resist composition which suppresses development defects and to provide a method for forming a pattern by using the composition.The positive resist composition contains: (A) a fluorine-containing resin which has such...
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JP2005062722A |
To provide a positive resist composition which shows sufficient transmitting property when an exposure light source at ≤160 nm, specifically, F2 excimer laser light (at 157 nm) is used and which is improved in surface roughness, develo...
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JP2005060350A |
To provide a raw material for alkali-soluble photosensitive resin composition that permits easy pattern formation and has excellent high heat resistance, high reliability, for example, moisture-resistance reliability, further high transp...
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JP2005060440A |
To provide a method for producing a copolymer having excellent weather, water and heat resistances, adhesion, transparency and solubility in solvents and to provide the copolymer produced by the method and a curable composition comprisin...
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JP2005505649A |
Ethylene and norbornene-type monomers are efficiently copolymerized by certain metal complexes, particularly nickel complexes, containing selected anionic and neutral bidentate ligands. The polymerization process is tolerant of polar fun...
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JP3623058B2 |
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JP2005043723A |
To provide a positive resist composition which is little in development defect.The positive resist composition is characterised in that it contains (A) a fluorine-containing resin having a structure in which fluorine has been substituted...
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JP2005015601A |
To obtain a hydrocarbon resin and a rubber composition compounded with the resin suitable for the purpose in view of the fact that rubber compositions having mild crosslinking rate while having postcure mechanical strength and durability...
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JP2005015532A |
To provide an antireflection film forming composition which has a high antireflection effect, does not cause intermixing, and can form a resist pattern excellent in resolution, pattern shape, etc.; and a polymer useful as a constituting ...
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JP2005010392A |
To provide a positive resist composition suitable for use under an exposure light source of ≤250 nm, particularly F2 excimer laser light (157 nm), and specifically to provide a positive resist composition exhibiting satisfactory transm...
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JP3609326B2 |
To obtain a photosensitive polymer and a chemical amplification type photoresist composition containing the photosensitive polymer. The photosensitive polymer is obtained using a norbornene ester having a bonded 1-12C aliphatic alcohol g...
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JP3607761B2 |
A hydrocarbon resin having a Ring and Ball (R&B) softening point of 70-150[deg]C, a max. Mz of 4000, a max. Mw of 2500 and a max. polydispersity (Pd) of 3.0, comprises a thermally polymerised copolymer made from: (I) 40-90 wt.% (based on...
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JP2004361578A |
To provide a positive resist composition suitable for use under an exposure light source of ≤250 nm, particularly F2 excimer laser light (157 nm), and to specifically provide a positive resist composition which exhibits satisfactory tr...
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JP2004361473A |
To provide a positive resist composition suitable for use under an exposure light source of ≤200 nm, particularly F2 excimer laser light (157 nm), and to specifically provide a positive resist composition which exhibits satisfactory tr...
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JP2004359964A |
To provide a thermally polymerized resin having a relatively low molecular weight and a relatively high softening point, which is produced using a low-cost DCPD feed stock as a base and does not substantially change with time in a reacto...
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JP2004359704A |
To provide a transparent norbornene resin having high heat resistance.A random and a block copolymers are obtained from a norbornene compound and a diene compound represented by formula (2) [wherein, R11 to R16 are each at least one kind...
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JP2004359798A |
To obtain a block copolymer consisting of an α-olefin-cyclic olefin copolymer unit and to provide a process for manufacturing the block copolymer with a high polymerization activity.The olefinic copolymer contains the α-olefin-cyclic o...
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JP2004361579A |
To provide a positive resist composition suitable for use under an exposure light source of ≤300 nm, particularly F2 excimer laser light (157 nm), and to specifically provide a positive resist composition which exhibits satisfactory tr...
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JP2004331965A |
To provide a catalyst for olefin polymerization effectively incorporating a cycloolefin, a conjugated polyene or an aromatic vinyl compound, and exhibiting a high polymerization activity, and to provide a method for production of olefin ...
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JP3589302B2 |
Novel tackifier resins having a Mn of 5,000 or less and a Tg of 0 DEG C. or above are produced by combining a metallocene catalyst with an alpha-olefin and a cyclic monomer. New adhesives are produced by blending the novel tackifier with...
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JP2004318044A |
To provide a resist composition having excellent sensitivity and low line edge roughness and significantly reducing development defects.The positive resist composition contains: (A) a resin which has a structure containing a specified re...
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JP3587739B2 |
The present invention provides a photoresist monomer represented by the following formula 2; a photoresist copolymer represented by the following formula 100; and a photoresist composition containing the same.wherein, R1 and R2 are indep...
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JP3587770B2 |
The present invention discloses photoresist polymers and photoresist compositions containing the same. The photoresist polymer comprises repeating units derived from (a) a compound of Chemical Formula 1; (b) a compound of Chemical Formul...
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JP3587743B2 |
The present invention relates to novel monomers which can be used to form polymers which are useful in a photolithography employing a light source in the far ultraviolet region of the light spectrum, copolymers thereof, and photoresist c...
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JP3587689B2 |
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JP3578430B2 |
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JP2004277523A |
To obtain a new cyclic olefin-based copolymer having excellent transparency and heat stability.This cyclic olefin copolymer is a cyclic olefin-based copolymer obtained by copolymerizing an α-olefin with a cyclic olefin and has ≥50 mol...
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JP2004269728A |
To provide a catalyst which satisfies both high polymerization activity and high copolymerization ability in the copolymerization of an α-olefin and a cycloolefin, and can easily be synthesized.A 2-20C α-olefin and a cycloolefin are co...
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JP2004530159A |
The present invention relates to a novel photoresist composition sensitive in the deep ultraviolet region and a method of processing the novel photoresist, where the photoresist comprises a novel copolymer, a photoactive component, and a...
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JP2004271843A |
To provide a positive resist composition exhibiting sufficient transmitting property when a light source at 157 nm is used and causing little line edge roughness, development defects and scum.The positive resist composition contains: (A)...
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JP2004269718A |
To provide a method for producing a norbornene resin excellent in moldability or film processability, and excellent in transparency and toughness.The norbornene resin can be produced by subjecting a norbornene compound and a styrene comp...
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JP2004271844A |
To provide a positive resist composition exhibiting sufficient transmitting property when a light source at 157 nm is used and improved in development defects, coating property and line edge roughness.The positive resist composition cont...
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JP3570415B2 |
To provide an optical retardation plate which makes it possible to conduct uniform polarization conversion within a wide wavelength region using a single plate and which has a low wavelength dispersion coefficient. The optical retardatio...
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JP2004529245A |
The present invention relates to a novel polymer comprising at least one unit derived from an ethylenically unsaturated compound containing at least one cyano functionality and at least one nonaromatic cyclic unit. The novel polymer is p...
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JP2004244594A |
To provide a novel cyclic conjugated diene copolymer excellent in cast film formation processibility, transparency, surface smoothness, and impact resistance; its production method; and a hydrogenation product of the cyclic conjugated di...
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JP2004526844A |
Polycyclic fluorine-containing polymers and photoresists and associated processes for microlithography in the extreme, far, and near UV are disclosed. The polycyclic fluorine-containing polymer is derived from a repeat unit comprising th...
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