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WO/2024/046093A1 |
Embodiments of the present application relate to the technical field of semiconductors, and provide a semiconductor structure and a preparation method, a radio frequency front-end module, a power conversion module and an electronic devic...
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WO/2024/048764A1 |
[Problem] To provide: a crystal having excellent crystallinity; a layered structure; and an element, an electronic device, an electronic apparatus, and a system that use the crystal and the layered structure. [Solution] This layered stru...
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WO/2024/046398A1 |
A composition. The composition comprises a metal ion source and a leveling agent as represented by formula (I), i.e., R1-S-(R3-O)m-(R2-O)n-R2-(O-R3)m-S-R1 , wherein each R1 group is independently selected from a substituted or unsubstitu...
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WO/2024/046983A1 |
The invention relates to a method for separating a semiconductor component (21) from a carrier (22), wherein the semiconductor component (21) is integrally bondedly held in a bonding plane (24) on a carrier (22) by means of a metal-conta...
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WO/2024/047746A1 |
In order to provide a plasma processing device with increased processing yield, an internal member thereof, or a method for manufacturing those, the present invention comprises a processing chamber which is disposed inside a vacuum chamb...
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WO/2024/047486A1 |
Provided is a storage device which allows for miniaturization and high integration. The present invention comprises: a first insulator on a substrate; an oxide semiconductor covering the first insulator; a first conductor and a second co...
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WO/2024/048273A1 |
In the present invention, a base is arranged inside a plasma treatment chamber. An electrostatic chuck is arranged on the upper part of the base. A first heater electrode layer is arranged inside the electrostatic chuck. A second heater ...
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WO/2024/045252A1 |
The present application relates to a carrying device and a wafer cooling system. The carrying device is used in the wafer cooling system which comprises a base for supporting and cooling a wafer. The carrying device comprises a body comp...
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WO/2024/048316A1 |
A substrate treatment device according to an embodiment of the present disclosure has: a treatment container; a substrate holding unit that is disposed inside of the treatment container and that holds a substrate; a gas nozzle that spray...
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WO/2024/049769A2 |
Patterned assemblies with a patterned release layer, methods of making, and methods of using are described herein. The assemblies with a patterned release layer may include donor plates, wafers, components (e.g. microelectronic component...
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WO/2024/048498A1 |
[Problem] To provide a silicon-etching liquid capable of wet-etching silicon at a high rate without etching an insulation film made of silicon dioxide, silicon nitride, or the like, when producing a semiconductor device or the like. [Sol...
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WO/2024/045758A1 |
A three-dimensional stacked fan-out package structure and a preparation method therefor. The fan-out package structure sequentially comprises chip stacks, a silicon interposer (101), transmission chips (122), a coating layer (102) and a ...
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WO/2024/045860A1 |
The present application provides a thin film transistor and an electronic device using same. An active layer in the thin film transistor comprises a first active layer, a channel layer and a second active layer which are stacked; the fir...
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WO/2024/046726A1 |
A semiconductor interconnect structure comprises a substrate, a plurality of metal lines disposed relative to the substrate and a plurality of first and second caps disposed on the metal lines wherein the first caps comprise a first diel...
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WO/2024/050158A1 |
A transistor and method of fabricating the same comprising a channel layer; an epitaxial barrier layer on the channel layer; an epitaxial cap layer on the epitaxial barrier layer; a dielectric layer on the epitaxial cap layer having an o...
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WO/2024/016380A9 |
The present disclosure relates to the technical field of semiconductors, and relates to a processing method, processing apparatus and processing system for a semiconductor structure. The processing method of the present disclosure compri...
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WO/2024/050167A1 |
Aspects disclosed herein include integrated circuit (IC) packages employing a capacitor interposer substrate with aligned external interconnects, and related fabrication methods. The IC package includes one or more semiconductor dies ("d...
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WO/2024/048766A1 |
[Problem] To provide a crystal having excellent crystallinity, a multilayer structure, and an element, an electronic device, an electronic appliance, and a system which are obtained using these. [Solution] An electroconductive crystal wh...
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WO/2024/049183A1 |
The present invention relates to a method for producing a ceramic substrate. The ceramic substrate can be used in high-output power modules due to the 0.3-0.8mm thickness of the upper and lower metal layers that adhere to the upper and l...
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WO/2024/049754A1 |
A method for forming alignment marks leverages pad density and critical dimensions (CDs). In some embodiments, the method includes forming first and second alignment marks on a first substrate and a second substrate where the alignment m...
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WO/2024/048604A1 |
A resin composition containing a polyimide precursor that includes a repeating unit represented by formula (1-1) and that has a polymerizable group content of 2 mmol/g or more and an amide bond content of 1.5 mmol/ g or less, a polymeriz...
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WO/2024/047959A1 |
The purpose of the present invention is to provide a semiconductor device having low electrical resistance while preventing defects in semiconductor elements caused by thermal expansion differences by laminating an Fe-Ni alloy metal laye...
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WO/2024/048121A1 |
In this invention, an outer flow adjustment member adjusts flow of a gas passing between an upper sealing member and a lower sealing member and causes the gas to flow downward along an outer surface of the lower sealing member. Thus, a s...
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WO/2024/045019A1 |
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a first conductive layer, a second conductive layer, and a gate electrode. The second nitride-based semi...
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WO/2024/048122A1 |
This invention pertains to a substrate treatment technology for performing a prescribed substrate treatment on a substrate by supplying a treatment liquid to the substrate held by a rotating substrate holding unit, and collecting droplet...
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WO/2024/048269A1 |
This substrate processing method includes: preparing a substrate having a surface from which a titanium nitride film and a zirconium oxide film are exposed; and selectively etching the zirconium oxide film from among the titanium nitride...
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WO/2024/048493A1 |
Provided is a release agent composition for photoirradiation release, the release agent composition containing a novolak resin, a (meth)acrylic ester polymer, and a solvent.
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WO/2024/048603A1 |
Provided are: a resin composition comprising a polyimide precursor containing a repeating unit represented by formula (2); a cured product; a laminate; a method for producing a cured product; a method for producing a laminate; a method f...
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WO/2024/047857A1 |
In the present invention, an upper base material 20 of a wafer placement table 10 is provided with a ceramic base material 21 that has an electrode 22 embedded therein, the upper base material 20 having a wafer placement surface 21a on t...
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WO/2024/048543A1 |
Provided is a technology for properly forming recesses in etched films. A plasma treatment method as in the present disclosure is executed by a plasma treatment device comprising a chamber and a substrate support section provided in the ...
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WO/2024/048239A1 |
Provided are: a semiconductor substrate in which occurrence of interface resistance in a junction interface can be prevented; and a method for manufacturing the semiconductor substrate. This method for manufacturing a semiconductor sub...
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WO/2024/049719A2 |
A fluid delivery system for dispensing slurry directly between a semiconductor wafer and a pad for a chemical mechanical polishing of the semiconductor wafer, the fluid delivery system comprising at least one fluid delivery nozzle affixe...
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WO/2024/047955A1 |
According to the present invention, a certain amount of IPA is supplied from a processing liquid nozzle to a substrate after a cleaning process. The liquid level of the IPA is gradually decreased by means of preliminary drying and when t...
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WO/2024/048548A1 |
This laminate comprises a film-shaped base material and an antistatic layer provided on one surface of the base material. The surface energy of the surface of the base material that is in contact with the antistatic layer is 35-70 mN/m, ...
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WO/2024/047097A1 |
The present invention provides a process for preparing a compound semiconductor layered structure, comprising the steps of: i. forming a layered structure comprising a silicon carbide substrate (1), a silicon carbide film (2) and a bondi...
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WO/2024/047500A1 |
Provided is a storage device which can be micro-fabricated or highly integrated. This storage device has a memory cell on a first transistor including silicon in a semiconductor layer. The memory cell has a capacitance element and a seco...
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WO/2024/049182A1 |
The present invention relates to a ceramic substrate unit and a method for producing same, the ceramic substrate unit comprising: a ceramic substrate; an upper metal layer adhered to the upper surface of the ceramic substrate and configu...
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WO/2024/047353A1 |
A Novel Transistor Device There is described a vertical transistor having a collector and emitter regions of a first type of semiconductor and base region that includes a sub-region of semiconductor of a second type and a channel of the ...
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WO/2024/045265A1 |
Provided are a semiconductor structure and a manufacturing method therefor. The manufacturing method comprises: providing a substrate (100); on the surface of the substrate (100), forming stack structures (110) arranged at intervals alon...
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WO/2024/048203A1 |
This semiconductor manufacturing device comprises a conveyance unit for conveying a substrate including: a product area where a die is mounted; and a frame area located outside the product area. The conveyance unit comprises: a conveyanc...
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WO/2024/049135A1 |
The present invention pertains to a method for forming through via metal wiring. According to the method of the present invention, through via metal wiring can be formed to have excellent plating quality without an expensive sputtering p...
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WO/2024/040771A1 |
A method for forming a semiconductor structure, comprising: forming a substrate, the substrate comprising a base, the base having a first device region and a second device region, the surface of the base in the first device region being ...
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WO/2024/044356A1 |
A robot apparatus with variable end effector pitch is provided suitable for accommodating varying pitches, e.g., between two adjacent processing chambers or between two adjacent load lock chambers. The robot apparatus may operate in dual...
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WO/2024/043676A1 |
The present invention relates to a method for manufacturing a group 3 nitride semiconductor template and a semiconductor template manufactured thereby, wherein a laser lift-off technique and a chemical lift-off technique are used so that...
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WO/2024/040516A1 |
The present disclosure provides a nitride-based electronic device with wafer-level dynamic on-resistance monitoring capability which can be integrated into an integrated circuit chip. The nitride-based electronic device comprises: a cont...
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WO/2024/043077A1 |
An etching method which comprises (a) a step for forming a carbon-containing film on the surface of an electrostatic chuck within a chamber, (b) a step for placing a substrate on the carbon-containing film, and (c) a step for plasma etch...
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WO/2024/042950A1 |
In a substrate treatment device according to the present invention, in an internal space of a chamber, a substrate holding part is disposed at a treatment position offset from the center of the internal space toward a conveyance opening ...
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WO/2024/042700A1 |
To measure the state of a substrate serving as an object subject to plating. This substrate state measurement device comprises: a stage constituted so as to support a substrate having a seed layer and a resist layer formed on the seed ...
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WO/2024/041985A1 |
The invention relates to a heat sink (10) for an electronic component, having a metal foam, the metal foam having: - at least one first region (1) having a first density, and - at least one second region (2) having at least one second de...
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WO/2024/042769A1 |
A cutting device (100) comprises a sliding door structure (200). The sliding door structure (200) is provided with: a rail cover (21) configured to cover a rail (23) that is configured to enable linear movement of a sliding door (20); an...
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