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JP2004526844A |
Polycyclic fluorine-containing polymers and photoresists and associated processes for microlithography in the extreme, far, and near UV are disclosed. The polycyclic fluorine-containing polymer is derived from a repeat unit comprising th...
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JP3558172B2 |
PURPOSE: To produce an α-pinene resin having a softening point as high as 140°C or above in yields as high as 80% or above. CONSTITUTION: This production process is one for producing an α-pinene resin by polymerizing α-pinene in the ...
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JP3557274B2 |
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JP3554633B2 |
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JP3552828B2 |
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JP2004219981A |
To provide a chemically amplified resist composition which exhibits sufficient transparency when using a light source of not more than 160nm, specifically F2 excimer laser beam light (157nm), and which is reduced in increase of particles...
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JP3539999B2 |
PURPOSE: To improve the transparency by forming a single-or multilayer non- oriented or mono- or biaxially oriented film in which at least one layer comprises a cycloolefin copolymer containing repeating units represented by specified fo...
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JP2004176026A |
To provide an adamantane-based polymer having a high dry etching resistance and an excellent penetrating property to a lower wave length light, and especially suitable for a film-forming composition of a photoresist-forming component use...
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JP2004175721A |
To provide a polymer useful as a chemical amplification resist for lithography using rays ≤190 nm wavelength, high in transparency to exposure light and excellent in substrate adhesion and dry etching resistance, and to provide a monom...
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JP2004170871A |
To provide a positive resist composition showing sufficient transparency when a light source at ≤160 nm wavelength, specifically, F2 excimer laser light (at 157 nm) is used, having high sensitivity and excellent dissolution contrast, a...
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JP2004171024A |
To provide a resist resin and a chemically amplifying resist having high transparency for light of far UV rays of about ≤220 nm wavelength, high etching durability and excellent adhesiveness with a substrate, and to provide a method fo...
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JP3536015B2 |
To provide novel photoresist substances which can be used in the region of far ultraviolet rays. Photoresist compositions comprise a bisnor-bornene carboxylate represented by the formula or a polymer containing a bis(norbornene dicarboxy...
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JP3534127B2 |
PURPOSE: To obtain a new thermoplastic norbornene-based copolymer, excellent in transparency, low birefringent properties, moisture, water and chemical resistances, electrical characteristics and low eluting properties of impurities and ...
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JP2004149607A |
To obtain a polymer capable of easily forming a cavity structure between metal wirings in a semiconductor device, and the like, and to provide a method for forming the cavity between the metal wirings using the polymer.The polymer for fo...
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JP3527809B2 |
To obtain a hole filling ink for the preparation of a through-hole printed wiring board which has a satisfactory curing depth, causes no significant volume shrinkage, has a good grindability, and can be easily removed with an alkali soln...
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JP2004131461A |
To provide new adamantane derivatives which are expected as raw materials for polymers having high resistance to dry etching and excellent transparency even in a short wavelength, particularly as raw materials for resist resins useful fo...
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JP2004117677A |
To provide a positive resist composition which significantly decreases the occurrence of development defects and with which an excellent square profile can be obtained.The positive resist composition contains: (A) a resin which contains ...
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JP3517471B2 |
PURPOSE: To obtain a high-mol.-wt. cycloolefin copolymer in a high yield by copolymerizing a 2C or higher α-olefin and a specific cycloolefin in the presence of a specific catalyst in a hydrocarbon solvent. CONSTITUTION: A cycloolefin c...
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JP2004109850A |
To provide a positive type resist composition that is suitable for the use of an exposure light source of ≤160nm especially of a F2 excimer laser beam (157nm), specifically a positive type resist composition that indicates sufficient t...
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JP2004107442A |
To provide a method for producing a polymer having an arbitrary molecular weight, with which a cyclic olefin homopolymer and copolymer are readily produced in extremely high catalytic activity, a method for producing a cyclic olefin homo...
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JP2004099689A |
To provide a new fluorine-containing compound and a polymer compound using it.A series of new fluorine-containing tricyclononene compounds as specific compounds having a tricyclic skeleton and a high fluorine content and containing a hyd...
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JP2004101934A |
To provide a positive resist composition which is suitably used for use of an exposure light source of ≤160 nm, specially, F2 excimer laser light (157 nm) and shows sufficient transparency in use of the light source of 157 nm and has h...
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JP2004102264A |
To provide a chemical amplification type resist composition which exhibits sufficient transmissivity when an exposure light source for F2 excimer laser light (157 nm) is used, has a fast etching speed, and improves roughness of a sample ...
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JP2004077908A |
To provide a positive type resist formulation which indicate sufficient transmittivity when the light source of a laser light whose wavelength is 160nm or less, concretely, an F2 excimer laser light (157nm) is used and which is excellent...
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JP2004063749A |
To provide a semiconductor device having a complete air isolation structure where impurities do not exist between wirings of a semiconductor element.In the semiconductor device, the sacrificial polymer whose heat resistant temperature is...
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JP2004505308A |
The present invention relates to polymer compositions and methods of polymerizing such compositions. Furthermore, the present invention relates to polymer compositions that are useful in forming waveguides and to methods for making waveg...
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JP2004004561A |
To provide a resist composition which has excellent transmittance to light of a wavelength below 170 nm and is particularly suitable for F2 excimer laser lithography.The positive resist composition containing a resin which itself is inso...
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JP2004002752A |
To provide a resin which has low permittivity and low refractive index and is useful as an insulation material, an optical component material, and an organic electroluminescent element material.A poly(alicyclic olefin) composition contai...
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JP3476466B2 |
Addition polymers derived from norbornene-functional monomers are terminated with an olefinic moiety derived from a chain transfer agent selected from a compound having a terminal olefinic double bond between adjacent carbon atoms, exclu...
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JP2003342240A |
To obtain a new fluorocycloalkane derivative useful as a monomer for producing radiation-sensitive resists highly transparent to radiations with ≤160 nm wavelengths and highly resistant to dry etching. The new derivative is 1,2,2,3,3,4...
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JP2003342319A |
To provide a purification process by which a metal contained in alicyclic hydrocarbon polymers as an impurity is removed and to provide a radiation-sensitive resin composition of a high performance photoresist which is composed of the pu...
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JP2003345020A |
To provide a composition having high transparency for radiation at short wavelengths, excellent solubility with a developer and excellent sensitivity, pattern profile and etching resistance. The radiation-sensitive resin composition cont...
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JP2003345022A |
To provide a positive resist composition suitable for use of an exposure light source of light of ≤160 nm, in particular, of F2 excimer laser light (of 157 nm), and practically having sufficient transparency when a light source of 157 ...
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JP2003335815A |
To provide a method for manufacturing a hydrogenated polymer which comprises a step of estimating the melt index value of the hydrogenated polymer to be produced by the hydrogenation of an unsaturated polymer with high precision based at...
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JP2003322971A |
To provide a radiation sensitive resin composition as a chemically amplifying resist which is sensitive to active radiation, for example, far UV rays represented by KrF excimer laser or ArF excimer laser and which can form a resist patte...
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JP2003322972A |
To provide a positive radiation sensitive composition showing sufficient transmission property when a light source of 157 nm wavelength is used, having wide latitude for defocusing, and suppressing development defects.The positive radiat...
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JP3465070B2 |
PURPOSE: To obtain a surface converted paper having excellent transparency, surface gloss, scratching resistance, moisture resistance and gas barrier properties, by coating base paper with a cyclic olefinic emulsion. CONSTITUTION: An aqu...
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JP3465335B2 |
PURPOSE: To obtain the subject polymer excellent in transparency, heat resistance, mechanical strength, moisture resistance and moldability by addition polymerization of a specific norbornene-based compound in the presence of a palladium...
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JP2003307850A |
To provide a positive resist composition suitable for use under an exposure light source of ≤160 nm, particularly F2 excimer laser light (157 nm), and specifically to provide a positive resist composition having satisfactory transmitta...
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JP3458656B2 |
To produce a catalyst useful for producing an olefin polymer having product properties of high quality in high activity by including a modified clay compound having a specific average particle diameter, a transition metal compound and an...
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JP3453396B2 |
PURPOSE: To obtain the subject composition containing a base polymer and a specific tackiness-providing resin at a specific ratio, having low molecular weight, excellent in adhesion at high temperature, creep property at high temperature...
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JP2003268188A |
To provide a semiconductor device encapsulated by a sealing material having excellent moldability and productivity, and high heat resistance, adhesion and transparency, and to provide its manufacturing method.This semiconductor device is...
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JP2003268040A |
To provide a dielectric resin material satisfactorily having mechanical characteristics suitable for a circuit member, especially for a millimeter-wave device which is used in a frequency band of ≥50 GHz, and to provide the circuit mem...
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JP2003252928A |
To provide a polymer which is excellent in transparency and suitable for a resist resin in a chemical amplification resist for photolithography using an exposure light at a wavelength of 180 nm or less.The polymer comprises having repeat...
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JP3444844B2 |
To provide a positive type photoresist composition which ensures improved line edge roughness and suppressed occurrence of development defects in the production of a semiconductor device. The positive type photoresist composition contain...
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JP2003246807A |
To provide a method of manufacturing a polymer containing an alicyclic structure with reduced amounts of volatile contents efficiently without lowering of the molecular weight.The method uses a centrifugal thin-film evaporator which has ...
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JP2003525311A |
The invention is directed to polymers containing a repeating unit derived from a norbornene sulfonamide. These may be addition polymers which include copolymers with one or more comonomers such as norbornene, ethylene, an acrylate or sul...
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JP2003212927A |
To obtain an optically transparent material (transparent resin film) which has excellent optical transparency, heat resistance and is improved in problems such as dimensional stability, adhesiveness, solvent and chemical resistances, bri...
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JP2003183361A |
To provide a harmless medical instrument composed of a resin molded article for a medical treatment which neither undergoes deformation by a steam sterilization treatment nor suffers from elution of impurities, particularly metals, or ad...
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JP2003183327A |
To provide a norbornene copolymer for photoresists, to provide a method for producing the same, and to provide a photoresist composition containing the same.The norbornene copolymer for photoresists is synthesized by using 5-norbornen-2-...
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